\"Terahertz current oscillations in a gated two-dimensional electron gas with antenna integrated at the channel ends\" (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• \"Terahertz current oscillations in a gated two-dimensional electron gas with antenna integrated at the channel ends\" (Articolo in rivista) (literal)

Anno

• 2012-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1063/1.4717464 (literal)

Alternative label

• A. Di Gaspare, R. Casini, V. Foglietti, V. Gilberti, E. Giovine, M. Ortolani (2012)
  "Terahertz current oscillations in a gated two-dimensional electron gas with antenna integrated at the channel ends"
  in Applied physics letters
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• A. Di Gaspare, R. Casini, V. Foglietti, V. Gilberti, E. Giovine, M. Ortolani (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 100 (literal)

Rivista

• Applied physics letters (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• CNR, Ist. Foton & Nanotecnol, I-00156 Rome, Italy; Univ. Roma La Sapienza, Dipartimento Fis, I-00185 Rome, Italy (literal)

Titolo

• \"Terahertz current oscillations in a gated two-dimensional electron gas with antenna integrated at the channel ends\" (literal)

Abstract

• We studied terahertz current oscillations induced by a frequency-tunable radiation source in a AlGaAs/InGaAs/AlGaAs heterostructure field effect transistor channel. A planar antenna was integrated on-chip, and a substrate lens was used for broadband coupling of free-space radiation at 0.18-0.72 THz to the channel ends. Through spectral analysis of the detection signal, we identified two different mixing mechanisms: one related to channel current oscillations and the other to modulation of the gate-to-channel potential. Depending on gate bias and radiation frequency, the two mechanisms either compete or cooperate, leading to responsivity up to 300 V/W and noise equivalent power of 1 nW/Hz(0.5) (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4717464] (literal)

Prodotto di

• Istituto di fotonica e nanotecnologie (IFN) (Istituto)
• MEMS,NEMS e Dispositivi microelettronici (MD.P05.018.001) (Modulo)

Autore CNR

• ENNIO GIOVINE (Unità di personale interno)

Insieme di parole chiave

• Parole chiave di "\"Terahertz current oscillations in a gated two-dimensional electron gas with antenna integrated at the channel ends\"" (Insieme di parole chiave)

Incoming links:

Autore CNR di

• ENNIO GIOVINE (Unità di personale interno)

Prodotto

• Istituto di fotonica e nanotecnologie (IFN) (Istituto)
• MEMS,NEMS e Dispositivi microelettronici (MD.P05.018.001) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Applied physics letters (Rivista)

Insieme di parole chiave di

• Parole chiave di "\"Terahertz current oscillations in a gated two-dimensional electron gas with antenna integrated at the channel ends\"" (Insieme di parole chiave)