High spatial resolution studies of microscopic capacitors in GaAs (Contributo in atti di convegno)

Type
Label
  • High spatial resolution studies of microscopic capacitors in GaAs (Contributo in atti di convegno) (literal)
Anno
  • 2001-01-01T00:00:00+01:00 (literal)
Alternative label
  • D. Furlanetto, D. Orani, S. Rubini, S. Modesti, E. Carlino and A. Franciosi (2001)
    High spatial resolution studies of microscopic capacitors in GaAs
    in 5th Multinational Congress on Electron Microscopy, Lecce (I), 20-25 September 2001
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • D. Furlanetto, D. Orani, S. Rubini, S. Modesti, E. Carlino and A. Franciosi (literal)
Pagina inizio
  • 309 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#titoloVolume
  • Proceedings 5th Multinational Congress on Electron Microscopy (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Laboratorio Nazionale TASC-INFM Area Science Park-Basovizza, SS 14 km 163.5, 34012 Trieste (literal)
Titolo
  • High spatial resolution studies of microscopic capacitors in GaAs (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#isbn
  • 1-58949-003-7 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#curatoriVolume
  • L Dini, M Catalano (literal)
Abstract
  • Cross-sectional scanning tunneling microscopy (XSTM) studies of microscopic capacitors fabricated in GaAs using Be and Si delta-doped layers, have been successfully completed at TASC. Major issues addressed include impurity redistribution in the growth direction across adjacent delta-doped layer, the minimum distance at which a stable electrostatic dipole could be fabricated, and the feasibility of determining the electrostatic potential distribution in nanostructures by XSTM. To this purpose, a number of samples were fabricated by molecular beam epitaxy (MBE), which included alternate Si donor and Be acceptor delta-doped layers with variable spacing. The samples were cleaved in ultra-high- vacuum (UHV) in order to expose {110} cross-sections of the epilayers with negligible step and defect density within the sampled areas. Transmission electron microscopy (TEM) experiments on cross-sectioned {110}-specimens produces further information on the bulk structural properties of ?-doped layers. Moreover, high spatial resolution details on the distribution of the chemical species and on the electronic structure of the interfaces could be achieved by using a field emission gun (FEG) as an electron source. (literal)
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