Atomic resolution composition analysis by scanning transmission electron microscopy high-angle annular dark-field imaging (Articolo in rivista)

Type
Label
  • Atomic resolution composition analysis by scanning transmission electron microscopy high-angle annular dark-field imaging (Articolo in rivista) (literal)
Anno
  • 2003-01-01T00:00:00+01:00 (literal)
Alternative label
  • E. Carlino, S. Modesti, D. Furlanetto, M. Piccin, S. Rubini and A. Franciosi (2003)
    Atomic resolution composition analysis by scanning transmission electron microscopy high-angle annular dark-field imaging
    in Applied physics letters (Online)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • E. Carlino, S. Modesti, D. Furlanetto, M. Piccin, S. Rubini and A. Franciosi (literal)
Pagina inizio
  • 662 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 83 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
  • Scopu (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Laboratorio Nazionale TASC-INFM, Area Science Park, S.S. 14, Km. 163.5, 34012 Trieste, Italy (literal)
Titolo
  • Atomic resolution composition analysis by scanning transmission electron microscopy high-angle annular dark-field imaging (literal)
Abstract
  • The silicon concentration profile in Si-GaAs ?001? superlattices grown by molecular beam epitaxy was investigated using scanning transmission electron microscopy high-angle annular dark-field ?HAADF? imaging. Comparison with atomic resolution results obtained through cross-sectional scanning tunneling microscopy indicates that, by choosing appropriate experimental conditions, HAADF imaging can be used to gauge the Si distribution in GaAs on the atomic scale even without any image simulation. © 2003 American Institute of Physics. ?DOI: 10.1063/1.1592314? (literal)
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