Influence of e-e scattering on the temperature dependence of the resistance of a ballistic point-contact in a two-dimensional electron system (Articolo in rivista)

Type
Label
  • Influence of e-e scattering on the temperature dependence of the resistance of a ballistic point-contact in a two-dimensional electron system (Articolo in rivista) (literal)
Anno
  • 2012-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1103/PhysRevB.86.075425 (literal)
Alternative label
  • M. Yu. Melnikov, J. P. Kotthaus, V. Pellegrini, L. Sorba, G. Biasiol, V. S. Khrapai (2012)
    Influence of e-e scattering on the temperature dependence of the resistance of a ballistic point-contact in a two-dimensional electron system
    in Physical review. B, Condensed matter and materials physics
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • M. Yu. Melnikov, J. P. Kotthaus, V. Pellegrini, L. Sorba, G. Biasiol, V. S. Khrapai (literal)
Pagina inizio
  • 075425 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 86 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • 1Institute of Solid State Physics, Russian Academy of Sciences, 142432 Chernogolovka, Russian Federation 2Center for NanoScience and Fakultät für Physik, Ludwig-Maximilians-Universität, Geschwister-Scholl-Platz 1, D-80539 München, Germany 3NEST, Istituto Nanoscienze-CNR and Scuola Normale Superiore, Piazza San Silvestro 12, I-56127 Pisa, Italy 4CNR-IOM, Laboratorio TASC, Area Science Park, I-34149 Trieste, Italy (literal)
Titolo
  • Influence of e-e scattering on the temperature dependence of the resistance of a ballistic point-contact in a two-dimensional electron system (literal)
Abstract
  • We experimentally investigate the temperature (T) dependence of the resistance of a classical ballistic point contact (PC) in a two-dimensional electron system (2DES). The split-gate PC is realized in a high-quality AlGaAs/GaAs heterostructure. The PC resistance is found to drop by more than 10% as T is raised from 0.5 K to 4.2 K. In the absence of a magnetic field, the T dependence is roughly linear below 2 K and tends to saturate at higher T. Perpendicular magnetic fields on the order of a few 10 mT suppress the T-dependent contribution ?R. This effect is more pronounced at lower temperatures, causing a crossover to a nearly parabolic T dependence in a magnetic field. The normalized magnetic field dependencies ?R(B) permit an empiric single parameter scaling in a wide range of PC gate voltages. These observations give strong evidence for the influence of electron-electron (e-e) scattering on the resistance of ballistic PCs. Our results are in qualitative agreement with a recent theory of the e-e scattering based T dependence of the conductance of classical ballistic PCs [ Phys. Rev. Lett. 101 216807 (2008) and Phys. Rev. B 81 125316 (2010)]. (literal)
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