\"Thermal Decomposition of Silicon-rich Oxides Deposited by the LPCVD Method\" (Articolo in rivista)

Type
Label
  • \"Thermal Decomposition of Silicon-rich Oxides Deposited by the LPCVD Method\" (Articolo in rivista) (literal)
Anno
  • 2012-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.5562/cca1969 (literal)
Alternative label
  • D. Risti?, M. Ivanda, K. Furi?, A. Chiasera, E. Moser, M. Ferrari (2012)
    "Thermal Decomposition of Silicon-rich Oxides Deposited by the LPCVD Method"
    in Croatica chemica acta
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • D. Risti?, M. Ivanda, K. Furi?, A. Chiasera, E. Moser, M. Ferrari (literal)
Pagina inizio
  • 91 (literal)
Pagina fine
  • 96 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 85 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • [CNR-IFN, Istituto di Fotonica e Nanotecnologie, CSMFO Lab, via alla Cascata 56/C,Povo, 38123, Italy ] [ Ru?er Bo?kovi? Institute, Bijeni?ka cesta 54, 10000 Zagreb, Croatia ] [Nanoscience Laboratory, Department of Physics, Via Sommarive 14, Povo 38123, Italy] (literal)
Titolo
  • \"Thermal Decomposition of Silicon-rich Oxides Deposited by the LPCVD Method\" (literal)
Abstract
  • Silicon-rich oxide (SiOx, 0 < x < 2) thin films were deposited using the Low Pressure Chemical Vapor Deposition (LPCVD) method at temperature of 570 °C using silane (SiH4) and oxygen as the reactant gasses. The films were annealed at temperatures of 800, 900, 1000, and 1100 °C to induce the separation of excess silicon in the SiOx films into nanosized crystalline silicon particles inside an amorphous SiOx matrix. The size of the silicon particles was determined using Raman spectroscopy. (literal)
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