http://www.cnr.it/ontology/cnr/individuo/prodotto/ID202450
Nanoporosity Induced by Ion Implantation in Germanium Thin Films Grown by Molecular Beam Epitaxy (Articolo in rivista)
- Type
- Label
- Nanoporosity Induced by Ion Implantation in Germanium Thin Films Grown by Molecular Beam Epitaxy (Articolo in rivista) (literal)
- Anno
- 2012-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1143/APEX.5.035201 (literal)
- Alternative label
Impellizzeri G, Romano L, Bosco L, Spinella C, Grimaldi MG (2012)
Nanoporosity Induced by Ion Implantation in Germanium Thin Films Grown by Molecular Beam Epitaxy
in Applied physics express
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- Impellizzeri G, Romano L, Bosco L, Spinella C, Grimaldi MG (literal)
- Pagina inizio
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
- http://apex.jsap.jp/link?APEX/5/035201/ (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
- Rivista
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
- Note
- ISI Web of Science (WOS) (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- [ 1 ] Univ Catania, CNR IMM MATIS, I-95123 Catania, Italy
[ 2 ] Univ Catania, Dipartimento Fis & Astron, I-95123 Catania, Italy
[ 3 ] Scuola Super Catania, I-95123 Catania, Italy
[ 4 ] CNR IMM, I-95121 Catania, Italy (literal)
- Titolo
- Nanoporosity Induced by Ion Implantation in Germanium Thin Films Grown by Molecular Beam Epitaxy (literal)
- Abstract
- This paper reports on the formation of nanoporous Ge in polycrystalline and amorphous Ge thin films, grown by molecular beam epitaxy and implanted with Ge+ ions at 300 keV with different fluences (3 x 10(15)-2 x 10(16) Ge/cm(2)). Implanted polycrystals show a more regular columnar structure with respect to smaller and disconnected voids of amorphous grown films. These results strongly rely on the film properties and mechanism of void nucleation. Our findings represent a goal for the technology transfer of the ion-induced nanoporosity from bulk Ge to Ge thin films and meet the requirements for future applications. (literal)
- Prodotto di
- Autore CNR
- Insieme di parole chiave
Incoming links:
- Prodotto
- Autore CNR di
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi
- Insieme di parole chiave di