Quantification of chemical distribution of guest species in a host matrix by atomic resolution STEM Z-contrast (Contributo in volume (capitolo o saggio))

Type
Label
  • Quantification of chemical distribution of guest species in a host matrix by atomic resolution STEM Z-contrast (Contributo in volume (capitolo o saggio)) (literal)
Anno
  • 2008-01-01T00:00:00+01:00 (literal)
Alternative label
  • Carlino E (2008)
    Quantification of chemical distribution of guest species in a host matrix by atomic resolution STEM Z-contrast
    Research Signpost, Trivandrum (India) in "Beam injection based nanocharacterization of advanced materials", 2008
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Carlino E (literal)
Pagina inizio
  • 221 (literal)
Pagina fine
  • 242 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#titoloVolume
  • \"Beam injection based nanocharacterization of advanced materials\" (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Center for Electron Microscopy - Laboratorio Nazionale TASC-INFM-CNR Area Science Park S.S. 14, Km. 163.5, 34012 Trieste, Italy (literal)
Titolo
  • Quantification of chemical distribution of guest species in a host matrix by atomic resolution STEM Z-contrast (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#isbn
  • 978-81-308-0226-8 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#curatoriVolume
  • G. Salviati, T. Sekiguchi. S. Heun, A. Gustafsson (literal)
Abstract
  • Current efforts to develop nanostructured materials and devices are stimulating the implementation of new experimental probes of the structure and chemical composition of solids on the atomic scale. High-resolution transmission electron microscopy has been widely used in the last decades to study the structure and the properties of materials at the highest spatial resolution. More recently, high angle annular dark field scanning transmission electron microscopy imaging has demonstrated sub-Angstrom resolution together with high sensitivity to the chemical composition of the material, allowing for studies of both the structure and the chemistry of materials and interfaces with atomic resolution, without the uncertainty related to the phase problem, in high resolution transmission electron microscopy. For its sensitivity to atomic number, high angle annular dark field imaging is also known as Z-contrast imaging. The sensitivity to fine variations of the chemistry of the specimen allows deriving the relevant chemical map from the intensity distribution in an image. This feature of scanning transmission electron microscopy high angle annular dark field imaging finds wide application in materials science, for example, in the study of -doping in semiconductors or in the study of chemistry at the interface between two materials. Even if important information of the specimen chemistry can be derived from a high angle annular dark field (HAADF) image without computer simulation, the detailed quantification of the distribution of guest species in a host matrix requires computer simulation with proper definition of all involved specimen parameters. Reliable computer simulations of HAADF images of complex structure can be performed by multi-slice methods, but require huge computer time. Here, a recent method to reduce the computation time by orders of magnitude, by optimization and parallelization of the multi-slice codes, will be illustrated. Furthermore, a recent method to derive important experimental parameters, such as TEM specimen thickness and microscope objective lens defocus, will be also described. Finally, a method recently developed to quantify the chemistry of the specimen from the intensity of the HAADF images will be presented. The method allows for measuring, with atomic spatial resolution, the chemical distribution of a guest species in a host matrix from the relevant HAADF image and will be applied, as an example, to the measure of chemical distribution of Si-layers buried in GaAs matrix. (literal)
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