A numerical method for the efficient atomistic simulation of the plasma-etch of nano-patterned structures (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• A numerical method for the efficient atomistic simulation of the plasma-etch of nano-patterned structures (Articolo in rivista) (literal)

Anno

• 2012-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1016/j.commatsci.2011.10.027 (literal)

Alternative label

• Chiaramonte L, Colombo R, Fazio G, Garozzo G, La Magna A (2012)
  A numerical method for the efficient atomistic simulation of the plasma-etch of nano-patterned structures
  in Computational materials science
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Chiaramonte L, Colombo R, Fazio G, Garozzo G, La Magna A (literal)

Pagina inizio

• 227 (literal)

Pagina fine

• 235 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url

• http://www.sciencedirect.com/science/article/pii/S0927025611005982 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 54 (literal)

Rivista

• Computational materials science (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 9 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• [ 1 ] Ist Microelettron & Microsistemi CNR IMM, I-95121 Catania, Italy [ 2 ] Micron, I-20041 Agrate Brianza, Italy (literal)

Titolo

• A numerical method for the efficient atomistic simulation of the plasma-etch of nano-patterned structures (literal)

Abstract

• In this work, we present a numerical model aimed to accurately and efficiently simulate the plasma dry-etching process in nano-patterned samples. The method is designed to reproduce the physical phenomena and control the parameters involved in the process. The modelling formulation is based on the Monte Carlo approach. This simulation technique is fundamental to efficiently compute the erosion kinetic at the atomic resolution. The atomic level simulation of the evolving profile is obtained linking (one to one) each virtual Monte Carlo event to each possible atomic phenomenon. The code has been designed to be coupled with a generic plasma status, characterized by the particle types (ions and neutrals), their flow rates and their energy/angle distributions. The simulation approach has been tested comparing numerical results and experimental analysis of etching processes for the case of Si etching in HBr/O-2 plasma. The results show the effectiveness of the implemented model which is able to predict the profile evolution and, consequently, to significantly support the process design. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)
• modelli e metodi numerici per la micro e nano elettronica (MD.P05.005.002) (Modulo)

Autore CNR

• LOREDANA CHIARAMONTE (Persona)
• ANTONINO LA MAGNA (Persona)

Insieme di parole chiave

• Keywords of "A numerical method for the efficient atomistic simulation of the plasma-etch of nano-patterned structures" (Insieme di parole chiave)

Incoming links:

Autore CNR di

• ANTONINO LA MAGNA (Persona)
• LOREDANA CHIARAMONTE (Persona)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• modelli e metodi numerici per la micro e nano elettronica (MD.P05.005.002) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Computational materials science (Rivista)

Insieme di parole chiave di

• Keywords of "A numerical method for the efficient atomistic simulation of the plasma-etch of nano-patterned structures" (Insieme di parole chiave)