2-D Finite-Element Modeling of ZnO Schottky Diodes With Large Ideality Factors (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• 2-D Finite-Element Modeling of ZnO Schottky Diodes With Large Ideality Factors (Articolo in rivista) (literal)

Anno

• 2012-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1109/TED.2012.2207459 (literal)

Alternative label

• Arcari M, Scarpa G, Lugli P, Tallarida G, Huby N, Guziewicz E, Krajewski TA, Godlewski M (2012)
  2-D Finite-Element Modeling of ZnO Schottky Diodes With Large Ideality Factors
  in I.E.E.E. transactions on electron devices
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Arcari M, Scarpa G, Lugli P, Tallarida G, Huby N, Guziewicz E, Krajewski TA, Godlewski M (literal)

Pagina inizio

• 2762 (literal)

Pagina fine

• 2766 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url

• http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6261533 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 59 (literal)

Rivista

• I.E.E.E. transactions on electron devices (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 5 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

• 10 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• [ 1 ] Tech Univ Munich, Inst Nanoelect, D-80333 Munich, Germany [ 2 ] CNR, Unit Agrate Brianza, Mat & Devices Microelect Lab, Inst Microelect & Microsyst, I-20864 Agrate Brianza, Italy [ 3 ] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland (literal)

Titolo

• 2-D Finite-Element Modeling of ZnO Schottky Diodes With Large Ideality Factors (literal)

Abstract

• In this paper, we complement our previous work on the study of low-temperature rectifying junctions based on Ag/ZnO Schottky barriers. Diodes characterized by very high I-ON/I-OFF ratio and ideality factors considerably higher than unity, in disagreement with the thermionic emission model, are modeled with a 2-D finite-element simulator. We could discard tunneling and inhomogeneous barrier-height distribution as sources for this anomalous value. A new interface charge layer model was therefore introduced, which is able to reproduce the electrical behavior in devices with large ideality factors without decreasing the rectifying properties. (literal)

Prodotto di

• Materiali autoassemblanti per applicazioni nanotecnologiche (MD.P05.025.001) (Modulo)
• Materiali e dispositivi nanoscalati per applicazioni in memorie non-volatili, architetture neuromorfiche e neuroelettronica (MD.P05.024.001) (Modulo)
• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• GRAZIELLA TALLARIDA (Persona)

Insieme di parole chiave

• Parole chiave di "2-D Finite-Element Modeling of ZnO Schottky Diodes With Large Ideality Factors" (Insieme di parole chiave)

Incoming links:

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Materiali e dispositivi nanoscalati per applicazioni in memorie non-volatili, architetture neuromorfiche e neuroelettronica (MD.P05.024.001) (Modulo)
• Materiali autoassemblanti per applicazioni nanotecnologiche (MD.P05.025.001) (Modulo)

Autore CNR di

• GRAZIELLA TALLARIDA (Persona)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• I.E.E.E. transactions on electron devices (Rivista)

Insieme di parole chiave di

• Parole chiave di "2-D Finite-Element Modeling of ZnO Schottky Diodes With Large Ideality Factors" (Insieme di parole chiave)