http://www.cnr.it/ontology/cnr/individuo/prodotto/ID201957
2-D Finite-Element Modeling of ZnO Schottky Diodes With Large Ideality Factors (Articolo in rivista)
- Type
- Label
- 2-D Finite-Element Modeling of ZnO Schottky Diodes With Large Ideality Factors (Articolo in rivista) (literal)
- Anno
- 2012-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1109/TED.2012.2207459 (literal)
- Alternative label
Arcari M, Scarpa G, Lugli P, Tallarida G, Huby N, Guziewicz E, Krajewski TA, Godlewski M (2012)
2-D Finite-Element Modeling of ZnO Schottky Diodes With Large Ideality Factors
in I.E.E.E. transactions on electron devices
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- Arcari M, Scarpa G, Lugli P, Tallarida G, Huby N, Guziewicz E, Krajewski TA, Godlewski M (literal)
- Pagina inizio
- Pagina fine
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
- http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6261533 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
- Rivista
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
- Note
- ISI Web of Science (WOS) (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- [ 1 ] Tech Univ Munich, Inst Nanoelect, D-80333 Munich, Germany
[ 2 ] CNR, Unit Agrate Brianza, Mat & Devices Microelect Lab, Inst Microelect & Microsyst, I-20864 Agrate Brianza, Italy
[ 3 ] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland (literal)
- Titolo
- 2-D Finite-Element Modeling of ZnO Schottky Diodes With Large Ideality Factors (literal)
- Abstract
- In this paper, we complement our previous work on the study of low-temperature rectifying junctions based on Ag/ZnO Schottky barriers. Diodes characterized by very high I-ON/I-OFF ratio and ideality factors considerably higher than unity, in disagreement with the thermionic emission model, are modeled with a 2-D finite-element simulator. We could discard tunneling and inhomogeneous barrier-height distribution as sources for this anomalous value. A new interface charge layer model was therefore introduced, which is able to reproduce the electrical behavior in devices with large ideality factors without decreasing the rectifying properties. (literal)
- Prodotto di
- Autore CNR
- Insieme di parole chiave
Incoming links:
- Prodotto
- Autore CNR di
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi
- Insieme di parole chiave di