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Electronic structure of single crystal UPd3, UGe2, and USb2 from hard X-ray and angle-resolved photoelectron spectroscopy (Articolo in rivista)

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Electronic structure of single crystal UPd3, UGe2, and USb2 from hard X-ray and angle-resolved photoelectron spectroscopy (Articolo in rivista) (literal)

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Beaux, MF )[ 1 ] ; Durakiewicz, T [ 1 ] ; Moreschini, L[ 2 ] ; Grioni, M [ 2 ] ; Offi, F [ 3,4 ] ; Monaco, G [ 5 ] ; Panaccione, G [ 6 ] ; Joyce, JJ [ 1 ] ; Bauer, ED [ 1 ] ; Sarrao, JL [ 1 ] ; Butterfield, MT [ 7 ] ; Guziewicz, E [ 8 ] (2011)
Electronic structure of single crystal UPd3, UGe2, and USb2 from hard X-ray and angle-resolved photoelectron spectroscopy
in Journal of electron spectroscopy and related phenomena (Print); Elsevier, Tokyo (Giappone)
(literal)

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Beaux, MF )[ 1 ] ; Durakiewicz, T [ 1 ] ; Moreschini, L[ 2 ] ; Grioni, M [ 2 ] ; Offi, F [ 3,4 ] ; Monaco, G [ 5 ] ; Panaccione, G [ 6 ] ; Joyce, JJ [ 1 ] ; Bauer, ED [ 1 ] ; Sarrao, JL [ 1 ] ; Butterfield, MT [ 7 ] ; Guziewicz, E [ 8 ] (literal)

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[ 1 ] Los Alamos Natl Lab, MPA Div, Los Alamos, NM 87545 USA [ 2 ] Ecole Polytech Fed EPFL, IPN, CH-1015 Lausanne, Switzerland [ 3 ] Univ Roma Tre, CNISM, I-00146 Rome, Italy [ 4 ] Univ Roma Tre, Dipartimento Fis, I-00146 Rome, Italy [ 5 ] European Synchrotron Radiat Facil, F-38042 Grenoble, France [ 6 ] Ist Officina Mat CNR, Lab TASC, I-34012 Trieste 9, Italy [ 7 ] KLA Tencor, Milpitas, CA USA [ 8 ] Polish Acad Sci, Inst Phys, Warsaw, Poland (literal)

Titolo

Electronic structure of single crystal UPd3, UGe2, and USb2 from hard X-ray and angle-resolved photoelectron spectroscopy (literal)

Abstract

Electronic structure of single crystal UPd3, UGe2, and USb2 has been measured from hard X-ray photoelectron spectroscopy (HAXPES) with 7.6 keV photons at the European Synchrotron Radiation Facility (ESRF). Lower photon energy angle-resolved photoelectron spectroscopy (ARPES) was also performed at the Synchrotron Radiation Center (SRC). Herein the following results are presented: (1) ARPES results demonstrate hybridization between the U 5f and Pd 4d electrons within UPd3. (ii) The greatly reduced surface sensitivity of HAXPES enabled observation of the bulk core levels in spite of surface oxidation. Photoelectron mean-free-path versus oxide layer thickness considerations were used to model the effectiveness of HAXPES for probing bulk features of in-air cleaved samples. (iii) Two distinct features separated by 800 meV were observed for the Sd 3d core level. These two features are attributed to manifestations of two distinct Sb sites within the USb2 single crystal as supported by consideration of interatomic distances and enthalpy-of-formation. (iv) Doniach-Sunjic line shape analysis of core level spectral features revealed correlations between asymmetry coefficients and 5f localization. (literal)

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