http://www.cnr.it/ontology/cnr/individuo/prodotto/ID201897
Reorientation transition of the magnetic proximity polarization in Fe/(Ga,Mn)As bilayers (Articolo in rivista)
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- Reorientation transition of the magnetic proximity polarization in Fe/(Ga,Mn)As bilayers (Articolo in rivista) (literal)
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- 2012-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1103/PhysRevB.85.184428 (literal)
- Alternative label
Sperl, M [ 1 ] ; Torelli, P [ 2 ] ; Eigenmann, F [ 1 ] ; Soda, M [ 1 ] ; Polesya, S [ 3 ] ; Utz, M [ 1 ] ; Bougeard, D [ 1 ] ; Ebert, H [ 3 ] Panaccione, G [ 2 ] ; Back, CH [ 1 ] (2012)
Reorientation transition of the magnetic proximity polarization in Fe/(Ga,Mn)As bilayers
in Physical review. B, Condensed matter and materials physics (CD-ROM); The American Physical Society, College Park, MD 20740-3844 (Stati Uniti d'America)
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- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- Sperl, M [ 1 ] ; Torelli, P [ 2 ] ; Eigenmann, F [ 1 ] ; Soda, M [ 1 ] ; Polesya, S [ 3 ] ; Utz, M [ 1 ] ; Bougeard, D [ 1 ] ; Ebert, H [ 3 ] Panaccione, G [ 2 ] ; Back, CH [ 1 ] (literal)
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- 1 ] Univ Regensburg, Inst Expt & Angew Phys, D-93040 Regensburg, Germany
[ 2 ] CNR, IOM, Lab TASC, I-34149 Trieste, Italy
[ 3 ] Univ Munich, Dept Chem, D-81377 Munich, Germany (literal)
- Titolo
- Reorientation transition of the magnetic proximity polarization in Fe/(Ga,Mn)As bilayers (literal)
- Abstract
- Recently, it has been observed that thin ferromagnetic Fe films deposited on top of (Ga,Mn)As layers induce a significant proximity polarization in the (Ga,Mn) As film even at room temperature. Furthermore, it was found that a thin interfacial region of the (Ga,Mn) As film is coupled antiferromagnetically to the Fe layer. Here we report a series of combined x-ray magnetic dichroism and superconducting quantum interference device magnetometer measurements for Fe/(Ga,Mn) As bilayers where the (Ga,Mn) As layer thickness is varied between 5 and 50 nm. We find a reorientation transition of the magnetic proximity polarization as a function of the (Ga,Mn) As thickness. The data are compared to results obtained performing ab initio calculations. A varying concentration of Mn interstitials as a function of (Ga,Mn) As layer thickness is responsible for this reorientation. Furthermore, exchange bias is studied in the fully epitaxial bilayer system. We find a rather strong ferromagnetic exchange bias. The strength of the exchange bias can be estimated by using a simple partial domain wall model. (literal)
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