http://www.cnr.it/ontology/cnr/individuo/prodotto/ID201317
Nanostructured TiOx film on Si substrate: room temperature formation of TiSix nanoclusters (Articolo in rivista)
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- Nanostructured TiOx film on Si substrate: room temperature formation of TiSix nanoclusters (Articolo in rivista) (literal)
- Anno
- 2010-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1007/s11051-009-9843-3 (literal)
- Alternative label
Mirco Chiodi/1, Emanuele Cavaliere/1, Iskandar Kholmanov/2, Monica de Simone/3, Oumar Sakho/4, Cinzia Cepek/3, Luca Gavioli/1 (2010)
Nanostructured TiOx film on Si substrate: room temperature formation of TiSix nanoclusters
in Journal of nanoparticle research; Springer, Dordrecht (Paesi Bassi)
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- Mirco Chiodi/1, Emanuele Cavaliere/1, Iskandar Kholmanov/2, Monica de Simone/3, Oumar Sakho/4, Cinzia Cepek/3, Luca Gavioli/1 (literal)
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- http://link.springer.com/article/10.1007%2Fs11051-009-9843-3 (literal)
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- 1- Dipartimento di Matematica e Fisica, Universita` Cattolica del Sacro Cuore di Brescia, Via Musei 41, Brescia 25121, Italy
2- I. Kholmanov CNR-INFM SENSOR Lab, Via Valotti, 9, BRESCIA 25133, Italy
3- C. Cepek ? L. Gavioli CNR-INFM, Laboratorio Nazionale TASC, SS-14, Km 163.5, Trieste 34012, Italy
4- O. Sakho Departement de Physique, Universite Cheikh Anta, DIOP, Dakar, BP 5005, Senegal (literal)
- Titolo
- Nanostructured TiOx film on Si substrate: room temperature formation of TiSix nanoclusters (literal)
- Abstract
- We present a morphologic and spectroscopic study of cluster-assembled TiOx films deposited by supersonic cluster beam source on clean silicon substrates. Data show the formation of nanometer--thick and uniform titanium silicides film at room temperature (RT). Formation of such thick TiSix film goes beyond the classical interfacial limit set by the Ti/Si diffusion barrier. The enhancement of Si diffusion through the TiOx film is explained as a direct consequence of the porous film structure. Upon ultra high vacuum annealing beyond 600 ?C, TiSi2 is formed and the oxygen present in the film is completely desorbed. The morphology of the nanostructured silicides is very stable for thermal treatments in the RT--1000 ?C range, with a slight cluster size increase, resulting in a film roughness an order of magnitude smaller than other TiOx/Si and Ti/Si films in the same temperature range. The present results might have a broad impact in the development of new and simple TiSi synthesis methods that favour their integration into nanodevices. (literal)
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