Ultra-low voltage, organic thin film transistors fabricated on plastic substrates by a highly reproducible process (Articolo in rivista)

Type
Label
  • Ultra-low voltage, organic thin film transistors fabricated on plastic substrates by a highly reproducible process (Articolo in rivista) (literal)
Anno
  • 2012-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1063/1.3691181 (literal)
Alternative label
  • Cosseddu, P; Lai, S; Barbaro, M; Bonfiglio, A (2012)
    Ultra-low voltage, organic thin film transistors fabricated on plastic substrates by a highly reproducible process
    in Applied physics letters
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Cosseddu, P; Lai, S; Barbaro, M; Bonfiglio, A (literal)
Pagina inizio
  • 093305 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 100 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Univ Cagliari Piazza Armi, Dept Elect & Elect Engn, I-09123 Cagliari, Italy Ctr S3, CNR, Inst Nanosci, I-41100 Modena, Italy (literal)
Titolo
  • Ultra-low voltage, organic thin film transistors fabricated on plastic substrates by a highly reproducible process (literal)
Abstract
  • Organic thin film transistors have been fabricated on plastic substrates using a combination of two ultrathin insulating films, namely a 6 nm Al2O3 film (grown by UV-Ozone treatment of a pre-deposited aluminium film) and a 25 nm parylene C film deposited by vapour phase, as gate dielectric. They show a very low leakage current density, around 2 x 10(-9) A/cm(2), and, most importantly, can be operated at voltages below 1 V. We demonstrate that this low-cost technique is highly reproducible and represents a step forward for the routine fabrication of ultra-low voltage plastic electronics. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3691181] (literal)
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