Raman sensitivity to crystal structure in InAs nanowires (Articolo in rivista)

Type
Label
  • Raman sensitivity to crystal structure in InAs nanowires (Articolo in rivista) (literal)
Anno
  • 2012-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1063/1.3698115 (literal)
Alternative label
  • Panda, JK; Roy, A; Singha, A; Gemmi, M; Ercolani, D; Pellegrini, V; Sorba, L (2012)
    Raman sensitivity to crystal structure in InAs nanowires
    in Applied physics letters
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Panda, JK; Roy, A; Singha, A; Gemmi, M; Ercolani, D; Pellegrini, V; Sorba, L (literal)
Pagina inizio
  • 143101 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 100 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Indian Inst Technol Kharagpur, Dept Phys, Kharagpur 721302, W Bengal, India Bose Inst, Dept Phys, Calcutta 700009, W Bengal, India Ist Italiano Tecnol, Ctr Nanotechnol Innovat NEST, I-56127 Pisa, Italy NEST Ist Nanosci CNR, I-56127 Pisa, Italy Scuola Normale Super Pisa, I-56127 Pisa, Italy (literal)
Titolo
  • Raman sensitivity to crystal structure in InAs nanowires (literal)
Abstract
  • We report electron transmission and Raman spectroscopy study of InAs nanowires. We demonstrate that the temperature dependent behavior of optical phonon energies can be used to determine the relative wurtzite fraction in the InAs nanowires. Furthermore, we propose that the interfacial strain between zincblende and wurtzite phases along the length of the wires manifests in the temperature-evolution of the phonon linewidths. From these studies, temperature-dependent Raman measurements emerge as a non-invasive method to study polytypism in such nanowires. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3698115] (literal)
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