InAs Epitaxy on GaAs(001): A Model Case of Strain-Driven Self-assembling of Quantum Dots (Contributo in volume (capitolo o saggio))

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Label
  • InAs Epitaxy on GaAs(001): A Model Case of Strain-Driven Self-assembling of Quantum Dots (Contributo in volume (capitolo o saggio)) (literal)
Anno
  • 2012-01-01T00:00:00+01:00 (literal)
Alternative label
  • E. Placidi, F. Arciprete, R. Magri, M. Rosini, A. Vinattieri, L. Cavigli, M. Gurioli, E. Giovine, L. Persichetti, M. Fanfoni, F. Patella, and A. Balzarotti (2012)
    InAs Epitaxy on GaAs(001): A Model Case of Strain-Driven Self-assembling of Quantum Dots
    Springer, London (Regno Unito) in Self-Assembly of Nanostructures, 2012
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • E. Placidi, F. Arciprete, R. Magri, M. Rosini, A. Vinattieri, L. Cavigli, M. Gurioli, E. Giovine, L. Persichetti, M. Fanfoni, F. Patella, and A. Balzarotti (literal)
Pagina inizio
  • 73 (literal)
Pagina fine
  • 125 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#titoloVolume
  • Self-Assembly of Nanostructures (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#volumeInCollana
  • 12 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CNR-ISM, via Fosso del Cavaliere 100, 00133 Rome, Italy Dipartimento di Fisica, Universita di Roma Tor Vergata, via della Ricerca Scientifica 1, 00133 Rome, Italy Dipartimento di Fisica, Universita degli Studi di Modena e Reggio Emilia, via Campi 213/A, 41100 Modena, Italy Centro S3 CNR-Istituto di Nanoscienze, via Campi 213/A, 41125 Modena, Italy Dipartimento di Fisica, Universita di Firenze, via G. Sansone 1, 59100 Sesto Fiorentino, Italy (literal)
Titolo
  • InAs Epitaxy on GaAs(001): A Model Case of Strain-Driven Self-assembling of Quantum Dots (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#isbn
  • 978-1-4614-0741-6 (literal)
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  • Bellucci Stefano (literal)
Abstract
  • We review basic topics of the self-aggregation process of InAs quantum dots on the GaAs(001) surface with reference to our recent experimental and theoretical studies. Atomic-force and scanning-tunnelling microscopy, and reflection high-energy electron diffraction measurements are presented for discussing issues such as formation and composition of the wetting layer, evolution of the 2D to 3D transition, size distribution and equilibrium shape of the islands. Single-dot emission is demonstrated by micro-photoluminescence spectra of samples where quantum dots were confined on selected nanoscale areas of the surface by molecular-beam epitaxial growth on lithographed substrates. Theoretical ab initio studies of the In diffusion on the wetting layer, and simulations with the finite element method of the elastic energy relaxation of the island-substrate system are also discussed. (literal)
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