Effects of different post-implantation annealing conditions on the electrical properties of interfaces to p-type implanted 4H-SiC (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Effects of different post-implantation annealing conditions on the electrical properties of interfaces to p-type implanted 4H-SiC (Articolo in rivista) (literal)

Anno

• 2012-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.4028/www.scientific.net/MSF.717-720.825 (literal)

Alternative label

• Frazzetto A, Roccaforte F, Giannazzo F, Lo Nigro R, Saggio M, Zanetti E, Raineri V (2012)
  Effects of different post-implantation annealing conditions on the electrical properties of interfaces to p-type implanted 4H-SiC
  in Materials science forum
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Frazzetto A, Roccaforte F, Giannazzo F, Lo Nigro R, Saggio M, Zanetti E, Raineri V (literal)

Pagina inizio

• 825 (literal)

Pagina fine

• 828 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url

• http://www.scientific.net/MSF.717-720.825 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 717-720 (literal)

Rivista

• Materials science forum (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• 1 CNR-IMM, Catania, Italy 2 STMicroelectronics, Catania, Italy (literal)

Titolo

• Effects of different post-implantation annealing conditions on the electrical properties of interfaces to p-type implanted 4H-SiC (literal)

Abstract

• This paper reports on the effects of different post-implantation annealings on the electrical properties of interfaces to p-type implanted 4H-SiC. The morphology of p-type implanted 4H-SiC was controlled using a capping layer during post-implantation activation annealing of the dopant. Indeed, the surface roughness of Al-implanted regions strongly depends on the use of the protective capping layer during the annealing. However, while the different morphological conditions do not affect the macroscopical electrical properties of the implanted SiC (such as the sheet resistance), they led to an improvement of the morphology and of the specific contact resistance of Ti/Al Ohmic contacts formed on the implanted regions. These electrical and morphologic improvements were associated with a lowering of Schottky barrier height. Preliminary results showed that the different activation annealing conditions of p-type implanted SiC can affect also the electrical parameters (like threshold voltage and mobility) of lateral MOSFETs. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Semiconduttori innovativi per elettronica di potenza ed Rf (MD.P05.003.001) (Modulo)

Autore CNR

• FABRIZIO ROCCAFORTE (Persona)
• RAFFAELLA LO NIGRO (Unità di personale interno)
• FILIPPO GIANNAZZO (Persona)

Insieme di parole chiave

• Keywords of "Effects of different post-implantation annealing conditions on the electrical properties of interfaces to p-type implanted 4H-SiC" (Insieme di parole chiave)

Incoming links:

Autore CNR di

• FABRIZIO ROCCAFORTE (Persona)
• FILIPPO GIANNAZZO (Persona)
• RAFFAELLA LO NIGRO (Unità di personale interno)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Semiconduttori innovativi per elettronica di potenza ed Rf (MD.P05.003.001) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Materials science forum (Rivista)

Insieme di parole chiave di

• Keywords of "Effects of different post-implantation annealing conditions on the electrical properties of interfaces to p-type implanted 4H-SiC" (Insieme di parole chiave)