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Layer-by-layer shuttered molecular-beam epitaxial growth of superconducting Sr1-xLaxCuO2 thin films (Articolo in rivista)

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Layer-by-layer shuttered molecular-beam epitaxial growth of superconducting Sr1-xLaxCuO2 thin films (Articolo in rivista) (literal)

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L.Maritato, A.Galdi, P.Orgiani, J.W.Harter, J.Schubert, K.M.Shen, D.G.Schlom (2013)
Layer-by-layer shuttered molecular-beam epitaxial growth of superconducting Sr1-xLaxCuO2 thin films
in Journal of applied physics (online); American Institute Of Physics (AIP), Melville (Stati Uniti d'America)
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L.Maritato, A.Galdi, P.Orgiani, J.W.Harter, J.Schubert, K.M.Shen, D.G.Schlom (literal)

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1 Dipartimento di Ingegneria dell'Informazione, Ingegneria Elettrica e Matematica Applicata-DIEM, University of Salerno and CNR-SPIN, 84084 Fisciano (SA), Italy; 2 Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, USA; 3 Laboratory of Atomic and Solid State Physics, Department of Physics, Cornell University, Ithaca, New York 14853, USA; 4 Forschungszentrum Julich, Institute of Bio- and Nanosystems IBN, D-52425 Julich, Germany; 5 Forschungszentrum Julich, JARA Fundamentals of Future Information Technology, D-52425 Julich, Germany; 6 Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14853, USA; 7 Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, USA; (literal)

Titolo

Layer-by-layer shuttered molecular-beam epitaxial growth of superconducting Sr1-xLaxCuO2 thin films (literal)

Abstract

Superconducting Sr$_{1-x}$La$_{x}$CuO$_{2}$ thin films have been grown on GdScO$_en$ substrates by reflection high-energy electron diffraction calibrated layer-by-layer molecular-beam epitaxy. X-ray diffraction analysis has confirmed the infinite layer structure after an in-situ vacuum annealing step. In-situ photoemission spectroscopy indicates that the vacuum annealing step employed immediately after film growth to achieve superconducting films results in oxygen loss from the films. The superconducting critical temperature depends on the La content $x$, with the highest value obtained for $x \sim 0.10$. Resistivity as a function of temperature $\rho(T)$ curves of optimally doped samples show a T$^{2}$ temperature dependence characteristic of a scattering process where electron-electron interactions dominate. (literal)

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