Spontaneous 2-dimensional carrier confinement at the n-type SrTiO3/LaAlO3 interface, (Articolo in rivista)

Type
Label
  • Spontaneous 2-dimensional carrier confinement at the n-type SrTiO3/LaAlO3 interface, (Articolo in rivista) (literal)
Anno
  • 2011-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1103/PhysRevLett.106.166807 (literal)
Alternative label
  • P. Delugas, A. Filippetti, V. Fiorentini, D. I. Bilc, D. Fontaine, P. Ghosez (2011)
    Spontaneous 2-dimensional carrier confinement at the n-type SrTiO3/LaAlO3 interface,
    in Physical review letters (Print)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • P. Delugas, A. Filippetti, V. Fiorentini, D. I. Bilc, D. Fontaine, P. Ghosez (literal)
Pagina inizio
  • 166807-1 (literal)
Pagina fine
  • 166807-4 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 106 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 4 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CNR-IOM UOS Cagliari; Dipartimento di Fisica, Universita` di Cagliari, SP Monserrato-Sestu km.0.700, 09042 Monserrato (CA), Italy; Physique The ?orique des Mate ?riaux, Universite ? de Liege, Allee du 6 Aout 17 (B5), 4000 Sart Tilman, Belgium (literal)
Titolo
  • Spontaneous 2-dimensional carrier confinement at the n-type SrTiO3/LaAlO3 interface, (literal)
Abstract
  • We describe the intrinsic mechanism of 2-dimensional electron confinement at the n-type SrTiO3=LaAlO3 interface as a function of the sheet carrier density ns via advanced first-principles calculations. Electrons localize spontaneously in Ti 3dxy levels within a thin (& 2 nm) interface-adjacent SrTiO3 region for ns lower than a threshold value nc $ 1014 cm_2. For ns > nc a portion of charge flows into Ti 3dxz-dyz levels extending farther from the interface. This intrinsic confinement can be attributed to the interface-induced symmetry breaking and localized nature of Ti 3d t2g states. The sheet carrier density directly controls the binding energy and the spatial extension of the conductive region. A direct, quantitative relation of these quantities with ns is provided. (literal)
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