http://www.cnr.it/ontology/cnr/individuo/prodotto/ID198274

Structure-Dependent Fano Resonances in the Infrared Spectra of Phonons in Few-Layer Graphene (Articolo in rivista)

Type

Label

Structure-Dependent Fano Resonances in the Infrared Spectra of Phonons in Few-Layer Graphene (Articolo in rivista) (literal)

Anno

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Alternative label

Zhiqiang Li (1); Chun Hung Lui (1); Emmanuele Cappelluti (2,3); Lara Benfatto (3,4); Kin Fai Mak (1); G. L. Carr (5); Jie Shan (6); Tony F. Heinz (1) (2012)
Structure-Dependent Fano Resonances in the Infrared Spectra of Phonons in Few-Layer Graphene
in Physical review letters (Print)
(literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

Zhiqiang Li (1); Chun Hung Lui (1); Emmanuele Cappelluti (2,3); Lara Benfatto (3,4); Kin Fai Mak (1); G. L. Carr (5); Jie Shan (6); Tony F. Heinz (1) (literal)

Pagina inizio

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Rivista

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Note

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1 Departments of Physics and Electrical Engineering, Columbia University, 538 West 120th Street, New York, New York 10027, USA 2 Instituto de Ciencia de Materiales de Madrid, CSIC, 28049 Cantoblanco, Madrid, Spain 3 Istituto dei Sistemi Complessi, U.O.S. Sapienza, CNR, via dei Taurini 19, 00185 Rome, Italy 4 Dipartimento di Fisica, Università \"La Sapienza\", P.le A. Moro 2, 00185 Rome, Italy 5 Photon Sciences, Brookhaven National Laboratory, Upton, New York 11973, USA 6 Department of Physics, Case Western Reserve University, 10900 Euclid Avenue, Cleveland, Ohio 44106, USA (literal)

Titolo

Structure-Dependent Fano Resonances in the Infrared Spectra of Phonons in Few-Layer Graphene (literal)

Abstract

The in-plane optical phonons around 200 meV in few-layer graphene are investigated utilizing infrared absorption spectroscopy. The phonon spectra exhibit unusual asymmetric features characteristic of Fano resonances, which depend critically on the layer thickness and stacking order of the sample. The phonon intensities in samples with rhombohedral (ABC) stacking are significantly higher than those with Bernal (AB) stacking. These observations reflect the strong coupling between phonons and interband electronic transitions in these systems and the distinctive variation in the joint density of electronic states in samples of differing thickness and stacking order. (literal)

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