Identification of four-hydrogen complexes in In-rich InxGa1-xN (x>0.4) alloys using photoluminescence, x-ray absorption, and density functional theory (Articolo in rivista)

Type
Label
  • Identification of four-hydrogen complexes in In-rich InxGa1-xN (x>0.4) alloys using photoluminescence, x-ray absorption, and density functional theory (Articolo in rivista) (literal)
Anno
  • 2012-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1103/PhysRevB.86.201202 (literal)
Alternative label
  • M. De Luca, G. Pettinari, G. Ciatto, L. Amidani, F. Filippone, A. Polimeni, E. Fonda, F. Boscherini, A. Amore Bonapasta, D. Giubertoni, A. Knübel, V. Lebedev, M. Capizzi (2012)
    Identification of four-hydrogen complexes in In-rich InxGa1-xN (x>0.4) alloys using photoluminescence, x-ray absorption, and density functional theory
    in Physical review. B, Condensed matter and materials physics
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • M. De Luca, G. Pettinari, G. Ciatto, L. Amidani, F. Filippone, A. Polimeni, E. Fonda, F. Boscherini, A. Amore Bonapasta, D. Giubertoni, A. Knübel, V. Lebedev, M. Capizzi (literal)
Pagina inizio
  • 201202 (literal)
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  • 86 (literal)
Rivista
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  • 20 (literal)
Note
  • Scopu (literal)
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  • Department of Physics, Sapienza Università di Roma, Piazzale A. Moro 2, 00185 Roma, Italy Synchrotron SOLEIL, Saint-Aubin, Boîte Postale 48, 91192 Gif sur Yvette Cedex, France Department of Physics and Astronomy and CNISM, Università di Bologna, Viale Berti-Pichat 6/2, 40127 Bologna, Italy CNR-ISM, Via Salaria Km 29, 5-Casella Postale 10-00016 Monterotondo Stazione, Roma, Italy Istituto Officina dei Materiali del CNR, Laboratorio TASC, Area Science Park, S.S. 14 km 163.5, 34012 Trieste, Italy CMM-Fondazione Bruno Kessler-IRST, via Sommarive 18, 38100 Povo Trento, Italy Fraunhofer Institute for Applied Solid State Physics, Tullastraße 72, 79108 Freiburg, Germany (literal)
Titolo
  • Identification of four-hydrogen complexes in In-rich InxGa1-xN (x>0.4) alloys using photoluminescence, x-ray absorption, and density functional theory (literal)
Abstract
  • Postgrowth hydrogen incorporation in In-rich InxGa1-xN (x>0.4) alloys strongly modifies the optical and structural properties of the material: A large blueshift of the emission and absorption energies is accompanied by a remarkable broadening of the interatomic-distance distribution, as probed by synchrotron radiation techniques. Both effects vanish at a finite In-concentration value (x ~ 0.5). Synergic x-ray absorption measurements and first-principle calculations unveil two different defective species forming upon hydrogenation: one due to the high chemical reactivity of H, the other ascribed to mere lattice damage. In the former species, four H atoms bind to as many N atoms, all nearest-neighbors of a same In atom. The stability of this peculiar complex, which is predicted to behave as a donor, stems from atomic displacements cooperating to reduce local strain. (literal)
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