Theoretical investigation of high velocity, temperature compensated Rayleigh waves along AlN/SiC substrates for high sensitivity mass sensors (Articolo in rivista)

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  • Theoretical investigation of high velocity, temperature compensated Rayleigh waves along AlN/SiC substrates for high sensitivity mass sensors (Articolo in rivista) (literal)
Anno
  • 2012-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1063/1.3675619 (literal)
Alternative label
  • Cinzia Caliendo (2012)
    Theoretical investigation of high velocity, temperature compensated Rayleigh waves along AlN/SiC substrates for high sensitivity mass sensors
    in Applied physics letters; AIP, American institute of physics, Melville, NY (Stati Uniti d'America)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Cinzia Caliendo (literal)
Pagina inizio
  • 021905 (literal)
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  • http://dx.doi.org/10.1063/1.3675619 (literal)
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  • 100 (literal)
Rivista
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  • 3 (literal)
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  • 2 (literal)
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  • ISI Web of Science (WOS) (literal)
  • Scopu (literal)
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  • Istituto dei Sistemi Complessi, ISC-CNR, Via Salaria km 29.300, 00015 Monterotondo Scalo, Rome, Italy (literal)
Titolo
  • Theoretical investigation of high velocity, temperature compensated Rayleigh waves along AlN/SiC substrates for high sensitivity mass sensors (literal)
Abstract
  • The operation of electroacoustic devices based on surface acoustic waves (SAW) propagation along ?-SiC/AlN and amorphous-SiC/AlN substrates is theoretically studied with respect to the AlN film thickness, the SAW propagation direction, temperature and electric boundary conditions. GHz-range, enhanced electroacoustic coupling coefficient, temperature compensated around 20 °C electroacoustic devices are the advantages of SiC/AlN composite structures. These structures are also suitable for the implementation of sensors with improved performances with respect to SAW devices based on bulk single crystal piezoelectric substrates. The structures feasibility was confirmed by structural investigation and quantitative analysis of sputtered amorphous-SiC and AlN films on Si substrates (literal)
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