Fabrication of GeO2 layers using a divalent Ge precursor (Articolo in rivista)

Type
Label
  • Fabrication of GeO2 layers using a divalent Ge precursor (Articolo in rivista) (literal)
Anno
  • 2007-01-01T00:00:00+01:00 (literal)
Alternative label
  • Perego, M; Scarel, G; Scarel, G; Fedushkin, IL; Skatova, AA (2007)
    Fabrication of GeO2 layers using a divalent Ge precursor
    in Applied physics letters
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Perego, M; Scarel, G; Scarel, G; Fedushkin, IL; Skatova, AA (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 90 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CNR, INFM, MDM Natl Lab, I-20041 Agrate Brianza, Italy; Russian Acad Sci, GA Razuvaev Inst Organomet Chem, Nizhnii Novgorod 603950, Russia (literal)
Titolo
  • Fabrication of GeO2 layers using a divalent Ge precursor (literal)
Abstract
  • Good quality and perfectly stoichiometric GeO2 layers are promising interlayers to be implemented in alternative devices based on high dielectric constant oxide/Ge(100). In this work, the authors report on the growth by atomic layer deposition of GeO2 films using a divalent Ge precursor combined with O-3. The films are composed of smooth and perfectly stoichiometric GeO2. The contamination level is extremely low. The deposited GeO2 films have a band gap of 5.81 +/- 0.04 eV. The conduction and valence band offsets at the GeO2/Ge heterojunction are found to be 0.6 +/- 0.1 and 4.5 +/- 0.1 eV, respectively. (literal)
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