Defect-related local magnetism at dilute Fe atoms in ion-implanted ZnO (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Defect-related local magnetism at dilute Fe atoms in ion-implanted ZnO (Articolo in rivista) (literal)

Anno

• 2007-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1063/1.2821290 (literal)

Alternative label

• Weyer, G; Gunnlaugsson, HP; Mantovan, R; Fanciulli, M; Naidoo, D; Bharuth-Ram, K; Agne, T (2007)
  Defect-related local magnetism at dilute Fe atoms in ion-implanted ZnO
  in Journal of applied physics
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Weyer, G; Gunnlaugsson, HP; Mantovan, R; Fanciulli, M; Naidoo, D; Bharuth-Ram, K; Agne, T (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 102 (literal)

Rivista

• Journal of applied physics (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• Aarhus Univ, Dept Phys & Astron, DK-8000 Aarhus, Denmark; CNR, INFM, Lab Nazl, I-20041 Agrate Brianza, Italy; Univ Witwatersrand, Sch Phys, ZA-2050 Wits, South Africa; Univ KwaZulu Natal, Sch Pure & Appl Phys, ZA-4041 Durban, South Africa; CERN, Div EP, CH-1211 Geneva 23, Switzerland (literal)

Titolo

• Defect-related local magnetism at dilute Fe atoms in ion-implanted ZnO (literal)

Abstract

• Semiconductors, which are ferromagnetic at room temperature (RTFM), are strived after as potential multifunctional materials. For ZnO, RTFM has been achieved by heavy doping with 3d transition metals. However, neither the conditions for nor the origin of the magnetism is as yet understood. Here, by implanting ZnO at temperatures of 300-800 K with dilute, radioactive Mn-57(+) ions, decaying to the Fe-57m Mossbauer state, we show that, most likely, Fe atoms, located on Zn sites in a high-spin Fe3+ state at <= 600 K with large magnetic moments, are in a magnetically ordered atomic surrounding with ordering temperatures >> 600 K. The formation/annealing of the ordering is proposed to occur/disappear on an atomic scale upon the association/dissociation of complexes of Mn/Fe probe atoms with the (mobile) Zn vacancies that are created in the implantation process. These results challenge present concepts to model (ferro)magnetic ordering in 3d-metal doped oxides and suggest this role of vacancies in the magnetism to be a rather general phenomenon. (c) 2007 American Institute of Physics. (literal)

Prodotto di

• Materiali, processi, e tecniche analitiche per la realizzazione di dispositivi innovativi con funzionalità logiche o di memoria non volatile integrabili su Silicio (MD.P05.007.001) (Modulo)
• Qubit a base di silicio o SiGe e studio di gas elettronici bidimensionali in dispositivi nanoelettronici (MD.P06.019.001) (Modulo)

Autore CNR

• MARCO FANCIULLI (Persona)
• ROBERTO MANTOVAN (Unità di personale esterno)
• MARCO FANCIULLI (Persona)

Insieme di parole chiave

• Parole chiave di "Defect-related local magnetism at dilute Fe atoms in ion-implanted ZnO" (Insieme di parole chiave)

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Autore CNR di

• MARCO FANCIULLI (Persona)
• MARCO FANCIULLI (Persona)
• ROBERTO MANTOVAN (Unità di personale esterno)

Prodotto

• Materiali, processi, e tecniche analitiche per la realizzazione di dispositivi innovativi con funzionalità logiche o di memoria non volatile integrabili su Silicio (MD.P05.007.001) (Modulo)
• Qubit a base di silicio o SiGe e studio di gas elettronici bidimensionali in dispositivi nanoelettronici (MD.P06.019.001) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Journal of applied physics (Rivista)

Insieme di parole chiave di

• Parole chiave di "Defect-related local magnetism at dilute Fe atoms in ion-implanted ZnO" (Insieme di parole chiave)