The correlation between gate dielectric, film growth, and charge transport in organic thin film transistors: the case of vacuum-sublimed tetracene thin films (Articolo in rivista)

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  • The correlation between gate dielectric, film growth, and charge transport in organic thin film transistors: the case of vacuum-sublimed tetracene thin films (Articolo in rivista) (literal)
Anno
  • 2013-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1039/c2tc00337f (literal)
Alternative label
  • Julia Wunsche 1, Giuseppe Tarabella 2, Simone Bertolazzi 1, Maimouna Bocoum 1, Nicola Coppede 2, Luisa Barba 3, Gianmichele Arrighetti 3, Luca Lutterotti 4, Salvatore Iannotta 2, Fabio Cicoira 5, Clara Santato 1 (2013)
    The correlation between gate dielectric, film growth, and charge transport in organic thin film transistors: the case of vacuum-sublimed tetracene thin films
    in Journal of materials chemistry (Print); Royal Society of Chemistry, Cambridge (Regno Unito)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Julia Wunsche 1, Giuseppe Tarabella 2, Simone Bertolazzi 1, Maimouna Bocoum 1, Nicola Coppede 2, Luisa Barba 3, Gianmichele Arrighetti 3, Luca Lutterotti 4, Salvatore Iannotta 2, Fabio Cicoira 5, Clara Santato 1 (literal)
Pagina inizio
  • 967 (literal)
Pagina fine
  • 976 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
  • http://pubs.rsc.org/en/content/articlepdf/2013/tc/c2tc00337f (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 1 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 5 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • 1 Ecole Polytech, Dept Genie Phys, Montreal, PQ H3C 3A7, Canada; 2 IMEM CNR, I-43100 Parma, Italy; 3 CNR, Inst Crystallog, I-34149 Trieste, Italy; 4 Univ Trent, Dipartimento Ingn Mat, I-38123 Trento, Italy; 5 Ecole Polytech, Dept Genie Chim, Montreal, PQ H3C 3A7, Canada (literal)
Titolo
  • The correlation between gate dielectric, film growth, and charge transport in organic thin film transistors: the case of vacuum-sublimed tetracene thin films (literal)
Abstract
  • The complex interplay of dielectric substrate properties, semiconducting film growth, crystal structure, texture, and charge carrier transport is investigated for the case of tetracene films deposited on different dielectrics (polystyrene, parylene C, polymethylmethacrylate, hexamethyldisilazane-treated SiO2, and untreated SiO2). The tetracene hole mobility, measured in the bottom-gate organic thin film transistor (OTFT) configuration, varies over more than one order of magnitude depending upon the dielectric layer used. Atomic force microscopy and synchrotron grazing incidence X-ray diffraction measurements, analyzed with the extended Rietveld method, were used to investigate the influence of film connectivity, crystalline phase, polymorphism, and texture on charge transport. The role of the surface polarity and the processing conditions of the gate dielectric layer are also discussed. Based on our results, we propose guidelines for the selection of a gate dielectric material favorable for charge transport in tetracene films. (literal)
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