Determination of hydrogen concentration in a-Si and a-Ge layers by elastic recoil detection analysis (Articolo in rivista)

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Label
  • Determination of hydrogen concentration in a-Si and a-Ge layers by elastic recoil detection analysis (Articolo in rivista) (literal)
Anno
  • 2012-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1016/j.vacuum.2011.07.050 (literal)
Alternative label
  • Khánh, N. Q.; Serényi, Miklos; Csik, A.; Frigeri, Cesare (2012)
    Determination of hydrogen concentration in a-Si and a-Ge layers by elastic recoil detection analysis
    in Vacuum; Elsevier Ltd, Oxford (Regno Unito)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Khánh, N. Q.; Serényi, Miklos; Csik, A.; Frigeri, Cesare (literal)
Pagina inizio
  • 711 (literal)
Pagina fine
  • 713 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
  • http://www.sciencedirect.com/science/article/pii/S0042207X11002971 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 86 (literal)
Rivista
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  • 6 (literal)
Note
  • ISI Web of Science (WOS) (literal)
  • Scopu (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • a Research Institute for Technical Physics and Materials Science, Hungarian Academy of Sciences (MTA-MFA), H-1121 Budapest, Konkoly-Thege ut 29-33, Hungary b Institute of Nuclear Research of the Hungarian Academy of Sciences (ATOMKI), H-4001 Debrecen, P.O. Box 51, Hungary c CNR-IMEM Institute, Parco Area delle Scienze, 37/A, 43010 Parma, Italy (literal)
Titolo
  • Determination of hydrogen concentration in a-Si and a-Ge layers by elastic recoil detection analysis (literal)
Abstract
  • In this work we have studied the individual a-Si and a-Ge hydrogenated layers prepared by RF sputtering on Si (100) substrates using Ar and H 2 gas mixture. The absolute value of atomic content of the H was determined by Elastic Recoil Detection Analysis (ERDA) with 1.6 MeV 4He + beam. The dynamics of the out diffusion was investigated by annealing in high purity (99.999%) argon atmosphere at 350 °C for several hours. It was clearly shown that hydrogen can diffuse out faster from Ge film than from the Si one during annealing of the samples. © 2011 Elsevier Ltd. All rights reserved. (literal)
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