http://www.cnr.it/ontology/cnr/individuo/prodotto/ID195011
Characterization of epitaxial 4H-SiC for photon detectors (Articolo in rivista)
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- Characterization of epitaxial 4H-SiC for photon detectors (Articolo in rivista) (literal)
- Anno
- 2012-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1088/1748-0221/7/09/P09005 (literal)
- Alternative label
F. Dubecky,a, E. Gombia,b C. Ferrari,b B. Zat'ko,a G. Vanko,a M. Baldini,b J. Kovàc,c D. Bacek,d P. Kovàc,d P. Hrkute and V. Necasc (2012)
Characterization of epitaxial 4H-SiC for photon detectors
in Journal of instrumentation; IOP Publishing Ltd. (Institute of Physics Publishing Ltd), "Bristol ; London" (Regno Unito)
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- F. Dubecky,a, E. Gombia,b C. Ferrari,b B. Zat'ko,a G. Vanko,a M. Baldini,b J. Kovàc,c D. Bacek,d P. Kovàc,d P. Hrkute and V. Necasc (literal)
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- http://iopscience.iop.org/1748-0221/7/09/P09005 (literal)
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- a Institute of Electrical Engineering, Slovak Academy of Sciences, Dubravska cesta 9, 841 04 Bratislava, Slovakia; b Istituto Materiali per Elettronica e Magnetismo-IMEM CNR, Parco Area delle Scienze 37/A, 43124 Parma, Italy; c Slovak University of Technology, Ilkovicova 3, 812 19 Bratislava, Slovakia; d Biont, a.s.,
Karloveska 2929/63, 841 04 Bratislava, Slovakia; e Institute of Informatics, Slovak Academy of Sciences,
Dubravska cesta 9, 845 07 Bratislava, Slovakia (literal)
- Titolo
- Characterization of epitaxial 4H-SiC for photon detectors (literal)
- Abstract
- High purity epitaxial 4H-SiC became a serious candidate for the fabrication of spectrometric radiation detectors with a high resistance to neutrons and gamma rays damage and suitable for applications in hot plasma diagnostics. The present work reports on i) the characterization of high purity epitaxial 4H-SiC grown by liquid phase epitaxy on SiC substrates and ii) the performances of metal/4H-SiC detectors fabricated on the same material. X-ray diffraction and topography as well as I-V, C-V and DLTS measurements are used for the evaluation of the material properties and device characteristics. The UV and X-ray detection abilities are evaluated by photocurrent measurements in the 3-6 eV region and pulse-height spectra measurements of the 241Am, respectively. Preliminary results of the detector hardness to fast neutron and gamma ray radiations are also reported (literal)
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