Characterization of epitaxial 4H-SiC for photon detectors (Articolo in rivista)

Type
Label
  • Characterization of epitaxial 4H-SiC for photon detectors (Articolo in rivista) (literal)
Anno
  • 2012-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1088/1748-0221/7/09/P09005 (literal)
Alternative label
  • F. Dubecky,a, E. Gombia,b C. Ferrari,b B. Zat'ko,a G. Vanko,a M. Baldini,b J. Kovàc,c D. Bacek,d P. Kovàc,d P. Hrkute and V. Necasc (2012)
    Characterization of epitaxial 4H-SiC for photon detectors
    in Journal of instrumentation; IOP Publishing Ltd. (Institute of Physics Publishing Ltd), "Bristol ; London" (Regno Unito)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • F. Dubecky,a, E. Gombia,b C. Ferrari,b B. Zat'ko,a G. Vanko,a M. Baldini,b J. Kovàc,c D. Bacek,d P. Kovàc,d P. Hrkute and V. Necasc (literal)
Pagina inizio
  • P09005-1 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
  • http://iopscience.iop.org/1748-0221/7/09/P09005 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 7 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 12 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 9 (literal)
Note
  • Scopu (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • a Institute of Electrical Engineering, Slovak Academy of Sciences, Dubravska cesta 9, 841 04 Bratislava, Slovakia; b Istituto Materiali per Elettronica e Magnetismo-IMEM CNR, Parco Area delle Scienze 37/A, 43124 Parma, Italy; c Slovak University of Technology, Ilkovicova 3, 812 19 Bratislava, Slovakia; d Biont, a.s., Karloveska 2929/63, 841 04 Bratislava, Slovakia; e Institute of Informatics, Slovak Academy of Sciences, Dubravska cesta 9, 845 07 Bratislava, Slovakia (literal)
Titolo
  • Characterization of epitaxial 4H-SiC for photon detectors (literal)
Abstract
  • High purity epitaxial 4H-SiC became a serious candidate for the fabrication of spectrometric radiation detectors with a high resistance to neutrons and gamma rays damage and suitable for applications in hot plasma diagnostics. The present work reports on i) the characterization of high purity epitaxial 4H-SiC grown by liquid phase epitaxy on SiC substrates and ii) the performances of metal/4H-SiC detectors fabricated on the same material. X-ray diffraction and topography as well as I-V, C-V and DLTS measurements are used for the evaluation of the material properties and device characteristics. The UV and X-ray detection abilities are evaluated by photocurrent measurements in the 3-6 eV region and pulse-height spectra measurements of the 241Am, respectively. Preliminary results of the detector hardness to fast neutron and gamma ray radiations are also reported (literal)
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