Epitaxial germanium for photovoltaic or opto-electronic applications (Contributo in atti di convegno)

Type
Label
  • Epitaxial germanium for photovoltaic or opto-electronic applications (Contributo in atti di convegno) (literal)
Anno
  • 2012-01-01T00:00:00+01:00 (literal)
Alternative label
  • C. Ferrari, G. Attolini, M. Baldini, M. Bosi, M. Calicchio, C. Frigeri, E. Gombia, and F. Rossi (2012)
    Epitaxial germanium for photovoltaic or opto-electronic applications
    in International Conference on Advanced Materials (ICAM) 2012, Chennai, India, January 5-7, 2012
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • C. Ferrari, G. Attolini, M. Baldini, M. Bosi, M. Calicchio, C. Frigeri, E. Gombia, and F. Rossi (literal)
Pagina inizio
  • xvii (literal)
Pagina fine
  • xxiv (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#altreInformazioni
  • International Conference on Advance Materials - ICAM 2012, Organized by Department of Physics, Loyola College, Chennai 600 034, Tamil Nadu, INDIA (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#titoloVolume
  • Proceedings of the International Conference on Advanced Materials (ICAM) 2012 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CNR-IMEM Institute, viale G. Usberti 37/A, 43124 Parma, Italy (literal)
Titolo
  • Epitaxial germanium for photovoltaic or opto-electronic applications (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#curatoriVolume
  • Dr. V. Joseph, Dr. S. Moorthy Babu, Dr. S. Balakumar, Dr. J. Madhavan, Dr. J. Merline Shyla (literal)
Abstract
  • The epitaxial growth of germanium is gaining interest in view of applications in the field of electronic and optoelectronic. By using the epitaxial method more defined doping profiles compared to the diffusion method can be achieved. The problems of doping and doping profiles obtained by epitaxial growth of germanium and the electrical characterization of the photovoltaic devices realized are presented and discussed. Ge rich GeSi/Ge epitaxial grown heterostructures with different Ge profiles are grown by epitaxy on Si substrates to obtain low cost SiGe virtual substrates. High resolution x-ray diffraction and transmission electron microscopy characterizations of this Ge rich layers are presented. (literal)
Prodotto di
Autore CNR

Incoming links:


Prodotto
Autore CNR di
data.CNR.it