Selective beta-SiC/SiO2 core-shell NW growth on patterned silicon substrate (Articolo in rivista)

Type
Label
  • Selective beta-SiC/SiO2 core-shell NW growth on patterned silicon substrate (Articolo in rivista) (literal)
Anno
  • 2012-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.4028/www.scientific.net/MSF.711.75 (literal)
Alternative label
  • Giovanni Attolini, Francesca Rossi, Filippo Fabbri, Giancarlo Salviati, Matteo Bosi, Bernard Emrico Watts (2012)
    Selective beta-SiC/SiO2 core-shell NW growth on patterned silicon substrate
    in Materials science forum; Trans Tech Publications Ltd., Stafa-Zurich (Swaziland)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Giovanni Attolini, Francesca Rossi, Filippo Fabbri, Giancarlo Salviati, Matteo Bosi, Bernard Emrico Watts (literal)
Pagina inizio
  • 75 (literal)
Pagina fine
  • 79 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#altreInformazioni
  • 4th Workshop on Advanced Semiconductor Materials and Devices for Power Electronics Applications (HeteroSiC & WASMPE 2011) Location: Tours, FRANCE Date: JUN 27-30, 2011 Sponsor(s):Mersen; ST; Dow Corning; Plassys; CREE; Novasic; Soitec; Agilent Technol; Centrotherm; Corial; Fogale Nanotech; Polytec; OMMIC; AIXTRON; Bruker; Oxford Instruments; IBS; Polytech Tours; IUT; TOURS; Tours Plus; Reg Ctr; Univ Francois Rabelais Tours; S2E2 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
  • http://www.scientific.net/MSF.711.75 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 711 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • IMEM CNR Inst, Inst Parco Area Scienze 37A, I-43124 Parma, Italy (literal)
Titolo
  • Selective beta-SiC/SiO2 core-shell NW growth on patterned silicon substrate (literal)
Abstract
  • NWs have been synthesized on patterned silicon wafers in a CVD system, using carbon oxide as single precursor and nickel nitrate as catalytic element, in nitrogen or argon atmosphere at 1100 degrees C. The coaxial structure and the crystallinity of the NW core are examined by (scanning) transmission electron microscopy. The patterning of the substrate allows to grow NWs in selected areas only, as imaged by SEM. Cathodoluminescence (CL) panchromatic images of the same areas point out that the light emitted under electron excitation is localized only in the area covered with NWs. The room-temperature CL spectrum has three different components peaked at 2.45 eV, related to the 3C-SiC near-band-edge emission, and at 2.75 and 3.75 eV, that are induced by the triplet and singlet states of oxygen-deficiency centers ODC(II) in silicon dioxide shell. (literal)
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