Transformation volume strain in Ni-Mn-Ga thin films (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Transformation volume strain in Ni-Mn-Ga thin films (Articolo in rivista) (literal)

Anno

• 2012-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1063/1.4772005 (literal)

Alternative label

• Aseguinolaza I.R.; Reyes-Salazar I.; Svalov A.V.; Wilson K.; Knowlton W.B.; Müllner P.; Barandiarán J.M.; Villa E.; Chernenko V.A. (2012)
  Transformation volume strain in Ni-Mn-Ga thin films
  in Applied physics letters (Online)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Aseguinolaza I.R.; Reyes-Salazar I.; Svalov A.V.; Wilson K.; Knowlton W.B.; Müllner P.; Barandiarán J.M.; Villa E.; Chernenko V.A. (literal)

Pagina inizio

• 241912 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url

• http://scitation.aip.org/content/aip/journal/apl/101/24/10.1063/1.4772005 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 101 (literal)

Rivista

• Applied physics letters (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

• 24 (literal)

Note

• ISI Web of Science (WOS) (literal)
• Scopu (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• 1-3,7,9 : BC Materials and Department of Electricity and Electronics, University of the Basque Country (UPV/EHU), P.O. Box 644, Bilbao 48080, Spain / 4-6 : Department of Materials Science and Engineering, Boise State University, Boise, ID 83725, United States / 8 : CNR-IENI, C.Promessi Sposi, 29, Lecco 23900, Italy 9 : Ikerbasque, Basque Foundation for Science, Bilbao 48011, Spain (literal)

Titolo

• Transformation volume strain in Ni-Mn-Ga thin films (literal)

Abstract

• The temperature dependences of the lattice parameters and residual stress have been measured for a fine-grained Ni52.2Mn26.8Ga 21.0 (at. %) thin film fabricated by sputter deposition onto a heated silicon wafer with SiNx buffer layer. The transformation volume strain in the film was found to be a lattice expansion during the forward martensitic transformation which is opposite to a volume contraction exhibited by bulk Ni-Mn-Ga alloys. This unusual effect can be explained by the substrate-induced residual stresses in the film and the difference in the elastic modulus of austenite and martensite. (literal)

Prodotto di

• Materiali a memoria di forma, materiali metallici e componenti funzionalizzati (ET.P06.004.004) (Modulo)
• Institute of Condensed Matter Chemistry and Energy Technologies (ICMATE) (Istituto)

Autore CNR

• ELENA VILLA (Persona)

Insieme di parole chiave

• Parole chiave di "Transformation volume strain in Ni-Mn-Ga thin films" (Insieme di parole chiave)

Incoming links:

Autore CNR di

• ELENA VILLA (Persona)

Prodotto

• Institute of Condensed Matter Chemistry and Energy Technologies (ICMATE) (Istituto)
• Materiali a memoria di forma, materiali metallici e componenti funzionalizzati (ET.P06.004.004) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Applied physics letters (Rivista)

Insieme di parole chiave di

• Parole chiave di "Transformation volume strain in Ni-Mn-Ga thin films" (Insieme di parole chiave)