http://www.cnr.it/ontology/cnr/individuo/prodotto/ID194836
beta-SiC NWs grown on patterned and MEMS silicon substrates (Articolo in rivista)
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- Label
- beta-SiC NWs grown on patterned and MEMS silicon substrates (Articolo in rivista) (literal)
- Anno
- 2011-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.4028/www.scientific.net/MSF.679-680.508 (literal)
- Alternative label
Watts, Bernard Enrico E.1, Attolini, Giovanni1, Rossi, Francesca1, Bosi, Matteo1, Salviati, Giancarlo1, Mancarella, Fulvio2, Ferri, Matteo2, Roncaglia, Alberto2, Poggi, Antonella2 (2011)
beta-SiC NWs grown on patterned and MEMS silicon substrates
in Materials science forum; Trans Tech Publications Ltd., Stafa-Zurich (Swaziland)
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- Watts, Bernard Enrico E.1, Attolini, Giovanni1, Rossi, Francesca1, Bosi, Matteo1, Salviati, Giancarlo1, Mancarella, Fulvio2, Ferri, Matteo2, Roncaglia, Alberto2, Poggi, Antonella2 (literal)
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- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#altreInformazioni
- 8th European Conference on Silicon Carbide and Related Materials Location: Sundvolden Conf Ctr, Oslo, NORWAY Date: AUG 29-SEP 02, 2010
Sponsor(s): Aixtron; Dow Corning; Birkeland Innovation; Centrotherm; CREE Inc; Gen Elect; LPE; Norden NordForsk; SiCED; SiCrystal AG; Res Council Norway; Univ Oslo
ID_PUMA: cnr.imem/2011-A0-040 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
- http://www.scientific.net/MSF.679-680.508 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
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- ISI Web of Science (WOS) (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- 1.IMEM-CNR, Parma; 2.IMM-Bologna (literal)
- Titolo
- beta-SiC NWs grown on patterned and MEMS silicon substrates (literal)
- Abstract
- Cubic silicon carbide nanowires (beta-SiC or 3C-SiC NW) have been grown by Vapour Phase Epitaxy on (001) silicon substrates patterned by conventional photolithography and on Micro Electro Mechanical Systems (MEMS, e.g. cantilevers, springs, bridges) fabricated on (001) Silicon On Insulator (SOI) wafers.
The NW morphology was investigated by scanning electron microscopy, showing that the nanowires grew selectively where a nickel thin layer was previously deposited, thanks to its catalytic action. High resolution transmission electron microscopy studies showed that the NWs are predominantly 3C polytype with < 111 > growth axis and stacking defects on (111) planes. (literal)
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