Intrinsic nitrogen-doped CVD-grown TiO2 thin films from all-N-coordinated Ti precursors for photo-electrochemical applications (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Intrinsic nitrogen-doped CVD-grown TiO2 thin films from all-N-coordinated Ti precursors for photo-electrochemical applications (Articolo in rivista) (literal)

Anno

• 2013-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1002/cvde.201206996 (literal)

Alternative label

• Kim S.J.; Xu K.; Parala H.; Beranek R.; Bledowski M.; Sliozberg K.; Becker H.-W.; Rogalla D.; Barreca D.; Maccato C.; Sada C.; Schuhmann W.; Fischer R.A.; Devi A. (2013)
  Intrinsic nitrogen-doped CVD-grown TiO2 thin films from all-N-coordinated Ti precursors for photo-electrochemical applications
  in Chemical vapor deposition (Print)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Kim S.J.; Xu K.; Parala H.; Beranek R.; Bledowski M.; Sliozberg K.; Becker H.-W.; Rogalla D.; Barreca D.; Maccato C.; Sada C.; Schuhmann W.; Fischer R.A.; Devi A. (literal)

Pagina inizio

• 45 (literal)

Pagina fine

• 52 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url

• http://onlinelibrary.wiley.com/doi/10.1002/cvde.201206996/abstract (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 19 (literal)

Rivista

• Chemical vapor deposition (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• 1,2,3,4,5,11,12: Inorganic Chemistry II, Faculty of Chemistry and Biochemistry, Ruhr-University Bochum, 44801 Bochum (Germany) / 6: Analytical Chemistry, Faculty of Chemistry and Biochemistry, Ruhr-University Bochum, 44801 Bochum (Germany) / 7: Dynamitron Tandem Laboratory of RUBION, Ruhr-University Bochum, 44801 Bochum (Germany) / 8: CNR-ISTMand INSTM, Department of Chemistry, Padova University, 35131 Padova (Italy) / 9: Department of Chemistry, Padova University, 35131 Padova (Italy) / 10: Department of Physics and CNISM, Padova University, 35131 Padova (Italy) (literal)

Titolo

• Intrinsic nitrogen-doped CVD-grown TiO2 thin films from all-N-coordinated Ti precursors for photo-electrochemical applications (literal)

Abstract

• N-doped titanium dioxide (TiO2) thin films are grown on Si(100) and indium tin oxide (ITO)-coated borosilicate glass substrates by metal-organic (MO)CVD. The intrinsic doping of TiO2 thin films is achieved using all-nitrogen-coordinated Ti precursors in the presence of oxygen. The titanium amide-guanidinate complex, [Ti(NMe2)3(guan)] (guan = N,N?-diisopropyl-2-dimethylamidoguanidinato) has been developed to compensate for the thermal instability of the parent alkylamide [Ti(NMe 2)4]. Both of these amide-based compounds are tested and compared as precursors for intrinsically N-doped TiO2 at various deposition temperatures in the absence of additional N sources. The structure and morphology of TiO2 thin films are characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM). Rutherford back scattering (RBS), nuclear reaction analysis (NRA), and secondary ion mass spectrometry (SIMS) analyses are performed to determine N content and distribution in the films. The optical and photoelectrochemical properties of TiO2 thin films on ITO substrates are also examined. N-doped TiO2 thin films, grown from [Ti(NMe 2)3(guan)] at 600 °C, exhibit the lowest optical absorption edge (3.0 eV) and the highest visible light photocurrent response. When compared to undoped TiO2, while in UV light photoconversion efficiency decreases significantly, the intrinsically N-doped TiO2 shows enhanced photocurrents under visible light irradiation. The intrinsic doping of TiO2 thin films with nitrogen by MOCVD and the investigation of the photo-electrochemical properties of the films are reported. N-doped anatase phase TiO2 thin films are grown on Si(100) and ITO substrates under specific processing conditions, using [Ti(NMe2) 4] (1) and [Ti(NMe2)3(guan)] (2) (guan = N,N?-diisopropyl-2-dimethylamidoguanidinato) as precursors. The films grown from [Ti(NMe2)3(guan)] at 600 °C show relatively large surface roughness and lower bandgap related with high N content (literal)

Prodotto di

• Institute of Condensed Matter Chemistry and Energy Technologies (ICMATE) (Istituto)
• Modeling computazionale di sistemi complessi costituiti da molecole interagenti con superfici e nanosistemi (PM.P05.007.002) (Modulo)

Autore CNR

• DAVIDE BARRECA (Persona)

Insieme di parole chiave

• Parole chiave di "Intrinsic nitrogen-doped CVD-grown TiO2 thin films from all-N-coordinated Ti precursors for photo-electrochemical applications" (Insieme di parole chiave)

Incoming links:

Autore CNR di

• DAVIDE BARRECA (Persona)

Prodotto

• Institute of Condensed Matter Chemistry and Energy Technologies (ICMATE) (Istituto)
• Modeling computazionale di sistemi complessi costituiti da molecole interagenti con superfici e nanosistemi (PM.P05.007.002) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Chemical vapor deposition (Rivista)

Insieme di parole chiave di

• Parole chiave di "Intrinsic nitrogen-doped CVD-grown TiO2 thin films from all-N-coordinated Ti precursors for photo-electrochemical applications" (Insieme di parole chiave)