http://www.cnr.it/ontology/cnr/individuo/prodotto/ID194132
Growth of Cu(In,Ga)Se2 thin films by a novel single-stage route based on pulsed electron deposition (Articolo in rivista)
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- Growth of Cu(In,Ga)Se2 thin films by a novel single-stage route based on pulsed electron deposition (Articolo in rivista) (literal)
- Anno
- 2013-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1002/pip.1234 (literal)
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S. Rampino, F. Bissoli, E. Gilioli and F. Pattini (2013)
Growth of Cu(In,Ga)Se2 thin films by a novel single-stage route based on pulsed electron deposition
in Progress in photovoltaics (Online); WILEY-BLACKWELL, 111 RIVER ST, HOBOKEN 07030-5774, NJ (Stati Uniti d'America)
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- S. Rampino, F. Bissoli, E. Gilioli and F. Pattini (literal)
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- Article first published online: 16 NOV 2011 (literal)
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- Titolo
- Growth of Cu(In,Ga)Se2 thin films by a novel single-stage route based on pulsed electron deposition (literal)
- Abstract
- We report a novel route for growing Cu(In,Ga)Se2 (CIGS) thin films, based upon the Pulsed Electron Deposition (PED) technique. Unlike other well-known deposition techniques, PED process allows the stoichiometric deposition of CIGS layers in a single stage, without requiring any further treatments for Cu/(In + Ga) ratio adjustment nor selenization. The structural properties of polycrystalline CIGS films strongly depend on the growth temperature, whereas post-deposition annealing enhances the grain size and the <112> out-of-plane preferred orientation of the chalcopyrite structure, without affecting the film composition. Preliminary measurements of the performances of solar cells based on these films confirm the great potentiality of PED-grown CIGS as absorber layers. (literal)
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