Evidence for a dose dependence for thermal redistribution of implanted silicon in SiO2 (Articolo in rivista)

Type
Label
  • Evidence for a dose dependence for thermal redistribution of implanted silicon in SiO2 (Articolo in rivista) (literal)
Anno
  • 2007-01-01T00:00:00+01:00 (literal)
Alternative label
  • Mathiot, D; Perego, M; Fanciulli, M; Ben Assayag, G (2007)
    Evidence for a dose dependence for thermal redistribution of implanted silicon in SiO2
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Mathiot, D; Perego, M; Fanciulli, M; Ben Assayag, G (literal)
Pagina inizio
  • 139 (literal)
Pagina fine
  • 142 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 254 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Univ Strasbourg 1, InESS, F-67037 Strasbourg, France; CNRS, F-67037 Strasbourg, France; MDM INFM, I-20041 Agrate Brianza, Italy; CNRS, CEMES, F-31055 Toulouse, France (literal)
Titolo
  • Evidence for a dose dependence for thermal redistribution of implanted silicon in SiO2 (literal)
Abstract
  • The redistribution of implanted Si-30 atoms in isotopically purified (SiO2)-Si-28 thermal oxide is studied as functions of temperature and implanted dose. The results clearly evidence a diffusion enhancement, which is more pronounced at low temperature and high dose. The results are consistent with the simple picture that the redistribution is governed by a Si interstitial diffusion mechanism, which can be slowed down by the presence of residual impurities. (c) 2006 Elsevier B.V. All rights reserved. (literal)
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