http://www.cnr.it/ontology/cnr/individuo/prodotto/ID1939
Evidence for a dose dependence for thermal redistribution of implanted silicon in SiO2 (Articolo in rivista)
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- Evidence for a dose dependence for thermal redistribution of implanted silicon in SiO2 (Articolo in rivista) (literal)
- Anno
- 2007-01-01T00:00:00+01:00 (literal)
- Alternative label
Mathiot, D; Perego, M; Fanciulli, M; Ben Assayag, G (2007)
Evidence for a dose dependence for thermal redistribution of implanted silicon in SiO2
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- Mathiot, D; Perego, M; Fanciulli, M; Ben Assayag, G (literal)
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- ISI Web of Science (WOS) (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- Univ Strasbourg 1, InESS, F-67037 Strasbourg, France; CNRS, F-67037 Strasbourg, France; MDM INFM, I-20041 Agrate Brianza, Italy; CNRS, CEMES, F-31055 Toulouse, France (literal)
- Titolo
- Evidence for a dose dependence for thermal redistribution of implanted silicon in SiO2 (literal)
- Abstract
- The redistribution of implanted Si-30 atoms in isotopically purified (SiO2)-Si-28 thermal oxide is studied as functions of temperature and implanted dose. The results clearly evidence a diffusion enhancement, which is more pronounced at low temperature and high dose. The results are consistent with the simple picture that the redistribution is governed by a Si interstitial diffusion mechanism, which can be slowed down by the presence of residual impurities. (c) 2006 Elsevier B.V. All rights reserved. (literal)
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