A Single-Device Universal Logic Gate Based on a Magnetically Enhanced Memristor (Articolo in rivista)

Type
Label
  • A Single-Device Universal Logic Gate Based on a Magnetically Enhanced Memristor (Articolo in rivista) (literal)
Anno
  • 2013-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1002/adma.201202031 (literal)
Alternative label
  • Mirko Prezioso, Alberto Riminucci, Patrizio Graziosi, Ilaria Bergenti, Rajib Rakshit, Raimondo Cecchini, Anna Vianelli, Francesco Borgatti, Norman Haag, M. Willis, Alan J. Drew, William P. Gillin and Valentin A. Dediu (2013)
    A Single-Device Universal Logic Gate Based on a Magnetically Enhanced Memristor
    in Advanced materials (Weinh., Print); Wiley-VCH Verlag Gmbh, Weinheim (Germania)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Mirko Prezioso, Alberto Riminucci, Patrizio Graziosi, Ilaria Bergenti, Rajib Rakshit, Raimondo Cecchini, Anna Vianelli, Francesco Borgatti, Norman Haag, M. Willis, Alan J. Drew, William P. Gillin and Valentin A. Dediu (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Consiglio Nazionale delle Ricerche - Istituto per lo, Studio dei Materiali Nanostrutturati, (CNR-ISMN) - via P. Gobetti 101, 40129 Bologna, Italy School of Physics and Astronomy, Queen Mary University of London, Mile End Road, London, E1 4NS, UK (literal)
Titolo
  • A Single-Device Universal Logic Gate Based on a Magnetically Enhanced Memristor (literal)
Abstract
  • Memristors are one of the most promising candidates for future information and communications technology (ICT) architectures. Two experimental proofs of concept are presented based on the intermixing of spintronic and memristive effects into a single device, a magnetically enhanced memristor (MEM). By exploiting the interaction between the memristance and the giant magnetoresistance (GMR), a universal implication (IMP) logic gate based on a single MEM device is realized. (literal)
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