Innovative dielectrics for semiconductor technology (Articolo in rivista)

Type
Label
  • Innovative dielectrics for semiconductor technology (Articolo in rivista) (literal)
Anno
  • 2007-01-01T00:00:00+01:00 (literal)
Alternative label
  • Brusa, RS; Macchi, C; Mariazzi, S; Karwasz, GP; Scarel, G; Fanciulli, M (2007)
    Innovative dielectrics for semiconductor technology
    in Radiation physics and chemistry (1993)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Brusa, RS; Macchi, C; Mariazzi, S; Karwasz, GP; Scarel, G; Fanciulli, M (literal)
Pagina inizio
  • 189 (literal)
Pagina fine
  • 194 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 76 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Univ Trent, Dipartimento Fis, I-38050 Trento, Italy; Univ Trent, Fac Ingn, I-38050 Trento, Italy; INFM, CNR, Lab MDM, I-20041 Milan, Italy (literal)
Titolo
  • Innovative dielectrics for semiconductor technology (literal)
Abstract
  • The synthesis and the characterization of dielectrics with very high and very low relative permittivity k, are one of the challenges for scaling the dimensions of microelectronic devices. It will be shown that unique and useful insight on high k thin films and about the surface termination of internal buried empty space (k = 1) can be obtained by combining different positron annihilation spectroscopies. Characterization of nano-cavities in Si and of HfO2 high k thin films will be presented and discussed. (c) 2006 Elsevier Ltd. All rights reserved. (literal)
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