Interface engineering for Ge metal-oxide-semiconductor devices (Articolo in rivista)

Type
Label
  • Interface engineering for Ge metal-oxide-semiconductor devices (Articolo in rivista) (literal)
Anno
  • 2007-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1016/j.tsf.2006.11.129 (literal)
Alternative label
  • Dimoulas, A; Brunco, DP; Ferrari, S; Seo, JW; Panayiotatos, Y; Sotiropoulos, A; Conard, T; Caymax, M; Spiga, S; Fanciulli, M; Dieker, C; Evangelou, EK; Galata, S; Houssa, M; Heyns, MM (2007)
    Interface engineering for Ge metal-oxide-semiconductor devices
    in Thin solid films (Print)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Dimoulas, A; Brunco, DP; Ferrari, S; Seo, JW; Panayiotatos, Y; Sotiropoulos, A; Conard, T; Caymax, M; Spiga, S; Fanciulli, M; Dieker, C; Evangelou, EK; Galata, S; Houssa, M; Heyns, MM (literal)
Pagina inizio
  • 6337 (literal)
Pagina fine
  • 6343 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 515 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • NCSR Demokritos, Inst Mat Sci, MBE Lab, GR-15310 Athens, Greece; IMEC, Louvain, Belgium; CNR, INFM, MDM Natl Lab, I-20133 Milan, Italy; Ecole Polytech Fed Lausanne, Inst Phys Complex Matter, CH-1015 Lausanne, Switzerland; Katholieke Univ Leuven, Dept Elect Engn, Louvain, Belgium (literal)
Titolo
  • Interface engineering for Ge metal-oxide-semiconductor devices (literal)
Abstract
  • High mobility semiconductors such as Ge with high-k gates may be required to enhance performance of future devices. One of the biggest challenges for the development of a Ge metal-oxide-semiconductor (MOS) technology is to find appropriate passivating materials and methodologies for the Ge/high-k interfaces. Germanium oxynitride is frequently used as a passivating interlayer in combination with HfO2 and is found to be necessary for the fabrication of functional devices. However, it is also considered to be insufficient since electrical characteristics in capacitors are non-ideal and field effect transistors underperform, probably due to a the high density of interface defects. We show that alternative passivating rate earth oxide layers prepared by molecular beam deposition produce improved electrical characteristics and a significant reduction of the density of interface states. In the case of CeO2, a thick interfacial layer is spontaneously formed containing oxidized Ge, which is considered to be the key for the observed improvements. (C) 2006 Elsevier B.V. All rights reserved. (literal)
Prodotto di
Autore CNR
Insieme di parole chiave

Incoming links:


Autore CNR di
Prodotto
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi
Insieme di parole chiave di
data.CNR.it