Microscopic origin of compressive strain in hydrogen-irradiated dilute GaAs1-yNy alloys: Role of N-Hn centers with n > 2 and their thermal stability (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Microscopic origin of compressive strain in hydrogen-irradiated dilute GaAs1-yNy alloys: Role of N-Hn centers with n > 2 and their thermal stability (Articolo in rivista) (literal)

Anno

• 2012-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1103/PhysRevB.86.085206 (literal)

Alternative label

• L. Wen, M. Stavola, W. B. Fowler, R. Trotta, A. Polimeni, M. Capizzi, G. Bisognin, M. Berti, S. Rubini, and F. Martelli (2012)
  Microscopic origin of compressive strain in hydrogen-irradiated dilute GaAs1-yNy alloys: Role of N-Hn centers with n > 2 and their thermal stability
  in Physical review. B, Condensed matter and materials physics
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• L. Wen, M. Stavola, W. B. Fowler, R. Trotta, A. Polimeni, M. Capizzi, G. Bisognin, M. Berti, S. Rubini, and F. Martelli (literal)

Pagina inizio

• 085206-1 (literal)

Pagina fine

• 085206-6 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 86 (literal)

Rivista

• Physical review. B, Condensed matter and materials physics (Rivista)

Note

• Scopus (literal)
• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• Department of Physics and Sherman Fairchild Laboratory, Lehigh University, Bethlehem, Pennsylvania 18015, USA CNISM and Dipartimento di Fisica, Sapienza Universit´a di Roma, I-00185 Roma, Italy MATIS CNR-INFM and Dipartimento di Fisica, Universit`a di Padova, via Marzolo 8, 35131 Padova, Italy TASC Laboratory, IOM-CNR Strada Statale 14, Km. 163.5, I-34149 Trieste, Italy (literal)

Titolo

• Microscopic origin of compressive strain in hydrogen-irradiated dilute GaAs1-yNy alloys: Role of N-Hn centers with n > 2 and their thermal stability (literal)

Abstract

• The addition of a small percent of nitrogen to GaAs causes a large reduction of the band gap energy and a tensile strain within the lattice. The further addition of H at 300 oC causes a recovery of the band gap of the N-free GaAs host. Concomitantly, tensile strain turns into compressive strain. Upon reduction of hydrogenation temperature, high-resolution x-ray diffraction studies show now a remarkable increase of compressive strain, while photoluminescence measurements show that the recovered band gap energy of GaAs does not change. Infrared measurements indicate that several N-Hn centers are formed in addition to the well-established H-N-H center (n = 2), which accounts for the band gap recovery. The vibrational properties of the corresponding deuterium centers provide clues to the microscopic structures of these centers. Furthermore, theory shows that the center with n = 2 is robust when additional H is added in its vicinity and remains as a core of likely N-Hn defects. (literal)

Prodotto di

• MD.P06.017.002 Sintesi e studio di nanostrutture (MD.P06.017.006) (Modulo)
• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• GABRIELE BISOGNIN (Unità di personale esterno)
• FAUSTINO MARTELLI (Unità di personale interno)
• SILVIA RUBINI (Unità di personale interno)
• MARINA BERTI (Unità di personale esterno)

Incoming links:

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• MD.P06.017.002 Sintesi e studio di nanostrutture (MD.P06.017.006) (Modulo)

Autore CNR di

• FAUSTINO MARTELLI (Unità di personale interno)
• SILVIA RUBINI (Unità di personale interno)
• GABRIELE BISOGNIN (Unità di personale esterno)
• MARINA BERTI (Unità di personale esterno)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Physical review. B, Condensed matter and materials physics (Rivista)