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Epitaxy of nanocrystalline Silicon Carbide on Si(111) at Room Temperature (Articolo in rivista)

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Epitaxy of nanocrystalline Silicon Carbide on Si(111) at Room Temperature (Articolo in rivista) (literal)

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Alternative label

Roberto Verucchi, Lucrezia Aversa, Marco V. Nardi, Simone Taioli, Silvio a Beccara, Dario Alfè, Lucia Nasi, Francesca Rossi, Giancarlo Salviati, and Salvatore Iannotta (2012)
Epitaxy of nanocrystalline Silicon Carbide on Si(111) at Room Temperature
in Journal of the American Chemical Society (Print); ACS, American chemical society, Washington, DC (Stati Uniti d'America)
(literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

Roberto Verucchi, Lucrezia Aversa, Marco V. Nardi, Simone Taioli, Silvio a Beccara, Dario Alfè, Lucia Nasi, Francesca Rossi, Giancarlo Salviati, and Salvatore Iannotta (literal)

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http://pubs.acs.org/doi/abs/10.1021/ja307804v?prevSearch=%255BContrib%253A%2Bverucchi%255D&searchHistoryKey= (literal)

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Istituto dei Materiali per l'Elettronica ed il Magnetismo, IMEM-CNR, sezione FBK di Trento, 38123 Trento, Italy Interdisciplinary Laboratory for Computational Science, FBK-CMM and Univ. of Trento, 38123 Trento, Italy Department of Physics, University of Trento, Italy & Istituto Nazionale di Fisica Nucleare, Sez. di Perugia, Italy Dipartimento di Chimica, Università di Bologna, Italy Department of Earth Sciences, Department of Physics and Astronomy, and London Centre for Nanotechnology, University College London, Gower Street, London, WC1E 6BT, UK Istituto dei Materiali per l'Elettronica ed il Magnetismo, IMEM-CNR, Parco Area delle Scienze 37/A - 43124 Parma, Italy (literal)

Titolo

Epitaxy of nanocrystalline Silicon Carbide on Si(111) at Room Temperature (literal)

Abstract

Silicon carbide (SiC) has unique chemical, physical and mechanical properties. A factor strongly limiting SiC based technologies is the high temperatures synthesis. In this work we provide unprece-dented experimental and theoretical evidence of 3C-SiC epitaxy on Silicon at room temperature by using a buckminsterfullerene (C60) supersonic beam. Chemical processes, such as C60 rupture, are activated at 30-35 eV precursor kinetic energy, far from thermodynamic equilibrium. This result paves the way to SiC synthesis on polymers or plastics, not withstanding high-temperature. (literal)

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