Comparison of radiative and structural properties of 1.3 mu m InxGa(1-x)As quantum-dot laser structures grown by metalorganic chemical vapor deposition and molecular-beam epitaxy: Effect on the lasing properties (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Comparison of radiative and structural properties of 1.3 mu m InxGa(1-x)As quantum-dot laser structures grown by metalorganic chemical vapor deposition and molecular-beam epitaxy: Effect on the lasing properties (Articolo in rivista) (literal)

Anno

• 2003-01-01T00:00:00+01:00 (literal)

Alternative label

• Passaseo A, De Vittorio M, Todaro MT, Tarantini I, De Giorgi M, Cingolani R, Taurino A, Catalano M, Fiore A, Markus A, Chen JX, Paranthoen C, Oesterle U, Ilegems M (2003)
  Comparison of radiative and structural properties of 1.3 mu m InxGa(1-x)As quantum-dot laser structures grown by metalorganic chemical vapor deposition and molecular-beam epitaxy: Effect on the lasing properties
  in Applied physics letters
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Passaseo A, De Vittorio M, Todaro MT, Tarantini I, De Giorgi M, Cingolani R, Taurino A, Catalano M, Fiore A, Markus A, Chen JX, Paranthoen C, Oesterle U, Ilegems M (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 82 (literal)

Rivista

• Applied physics letters (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• INFM, Unita Lecce,Natl Nanotechnol Lab, I-73100 Lecce, Italy CNR Ist IMM, Ecole Polytech Fed Lausanne, Inst Quantum Elect & Photon, CNR, Inst Photon & Nanotechnol, (literal)

Titolo

• Comparison of radiative and structural properties of 1.3 mu m InxGa(1-x)As quantum-dot laser structures grown by metalorganic chemical vapor deposition and molecular-beam epitaxy: Effect on the lasing properties (literal)

Abstract

• We have studied the radiative and structural properties of identical InxGa(1-x) As quantum dot laser structures grown by metalorganic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE). Despite the comparable emission properties found in the two devices by photoluminescence, electroluminescence, and photocurrent spectroscopy, efficient lasing from the ground state is achieved only in the MBE sample, whereas excited state lasing is obtained in the MOCVD device. Such a difference is ascribed to the existence of the internal dipole field in the MOCVD structure, induced by the strong faceting of the dots, as observed by high-resolution transmission electron microscopy (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Nanotecnologie applicate a semiconduttori, ossidi e isolanti (MD.P06.028.001) (Modulo)

Autore CNR

• ANTONIETTA TAURINO (Unità di personale interno)
• MILENA DE GIORGI (Persona)
• MARIA TERESA TODARO (Unità di personale interno)
• MASSIMO DE VITTORIO (Persona)
• ADRIANA GRAZIA PASSASEO (Unità di personale interno)
• MASSIMO CATALANO (Persona)

Incoming links:

Autore CNR di

• MASSIMO CATALANO (Persona)
• ADRIANA GRAZIA PASSASEO (Unità di personale interno)
• MILENA DE GIORGI (Persona)
• MARIA TERESA TODARO (Unità di personale interno)
• ANTONIETTA TAURINO (Unità di personale interno)
• MASSIMO DE VITTORIO (Persona)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Nanotecnologie applicate a semiconduttori, ossidi e isolanti (MD.P06.028.001) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Applied physics letters (Rivista)