Role of substrate temperature on the structural, morphological and optical properties of CuGaSe2 thin films grown by Pulsed Electron Deposition technique (Articolo in rivista)

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  • Role of substrate temperature on the structural, morphological and optical properties of CuGaSe2 thin films grown by Pulsed Electron Deposition technique (Articolo in rivista) (literal)
Anno
  • 2012-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1016/j.tsf.2012.07.126 (literal)
Alternative label
  • Matteo Bronzoni, Marco Stefancich, Stefano Rampino (2012)
    Role of substrate temperature on the structural, morphological and optical properties of CuGaSe2 thin films grown by Pulsed Electron Deposition technique
    in Thin solid films (Print); Elsevier B.V., Amsterdam (Belgio)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Matteo Bronzoni, Marco Stefancich, Stefano Rampino (literal)
Pagina inizio
  • 7054 (literal)
Pagina fine
  • 7061 (literal)
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  • http://pdn.sciencedirect.com/science?_ob=MiamiImageURL&_cid=271603&_user=10207712&_pii=S0040609012009935&_check=y&_origin=article&_zone=toolbar&_coverDate=01-Oct-2012&view=c&originContentFamily=serial&wchp=dGLbVlt-zSkWb&md5=53a17e429be079d2274b8bfbdadb19bd&pid=1-s2.0-S0040609012009935-main.pdf (literal)
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  • 520 (literal)
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  • 8 (literal)
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  • 24 (literal)
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  • ISI Web of Science (WOS) (literal)
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  • IMEM-CNR, Parco Area delle Scienze 37/A, 43124 Parma, Italy LENS Laboratory, Masdar Institute of Science and Technology, Masdar City, PO Box 54224, Abu Dhabi, United Arab Emirates (literal)
Titolo
  • Role of substrate temperature on the structural, morphological and optical properties of CuGaSe2 thin films grown by Pulsed Electron Deposition technique (literal)
Abstract
  • CuGaSe2 (CGS) thin films were grown on uncoated and Mo-coated soda lime glass by Pulsed Electron Deposition (PED) technique at substrate temperatures comprised between 25 °C and 475 °C. X-ray diffraction analysis reveals that CGS samples exhibit a noteworthy crystal quality even at low growth temperature, Tg = 100 °C, whereas the out-of-plane preferential orientation of CGS chalcopyrite phase switches from < 220 > to < 112 > by increasing the substrate temperature. Annealing treatments seem to enhance the crystallinity of the film and to release the residual strain energy. Visible/near-infrared absorbance spectra show a monotonic decrease of CGS optical bandgap (from 1.75 to 1.65 eV) by enhancing the substrate temperature. Yet the morphology of CGS films strongly depends on Tg, which promotes the formation of larger columnar grains perpendicular to the growth plane. Grain dimensions of ~ 2 ?m are achieved when CGS films are grown at high temperature (> 400 °C) on Mo-coated glass. The results indicate that PED is a promising growth technique for achieving good-quality CGS that can be useful as absorber layers in thin film solar cells. (literal)
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