http://www.cnr.it/ontology/cnr/individuo/prodotto/ID191520
Structural, chemical, and electrical characterization of indium nitride produced by pulsed laser ablation (Articolo in rivista)
- Type
- Label
- Structural, chemical, and electrical characterization of indium nitride produced by pulsed laser ablation (Articolo in rivista) (literal)
- Anno
- 2012-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1002/pssc.201100130 (literal)
- Alternative label
Orlando S., Santagata A., Parisi GP., Medici L., Kaciulis S., Mezzi A., Bellucci A., Cappelli E., Trucchi DM. (2012)
Structural, chemical, and electrical characterization of indium nitride produced by pulsed laser ablation
in Physica status solidi. C, Current topics in solid state physics (Internet); Wiley-VCH Verlag Gmbh, Weinheim (Germania)
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- Orlando S., Santagata A., Parisi GP., Medici L., Kaciulis S., Mezzi A., Bellucci A., Cappelli E., Trucchi DM. (literal)
- Pagina inizio
- Pagina fine
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
- Rivista
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
- Note
- Scopu (literal)
- ISI Web of Science (WOS) (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- CNR-IMIP PZ, Zona Industriale di Tito Scalo, 85050 Tito Scalo (PZ), Italy
CNR-IMAA PZ, Zona Industriale di Tito Scalo, 85050 Tito Scalo (PZ), Italy
CNR-ISMN, 00016 Montelibretti (Roma), Italy
CNR-IMIP, 00016 Montelibretti (Roma), Italy (literal)
- Titolo
- Structural, chemical, and electrical characterization of indium nitride produced by pulsed laser ablation (literal)
- Abstract
- The peculiar electronic characteristics of indium nitride offers great technological potential for novel device applications in several areas such as: multi-junction solar cells, terahertz emitters, chemical sensors, and light emitting diodes. Reactive pulsed laser ablation has been used to deposit indium nitride thin films for its versatility. The laser source employed has been a Nd:YAG (~8 ns, 532 nm, 10 Hz) performing the ablation in a RF-generated nitrogen plasma. Thin films have been deposited varying some parameters such as the substrate temperature, the nitrogen gas pressure, and the RF power. Structural (XRD) and chemical (XPS) characterizations have been performed. Electrical resistivity of the films has been evaluated to correlate structural and chemical properties to the electrical ones. (literal)
- Editore
- Prodotto di
- Autore CNR
- Insieme di parole chiave
Incoming links:
- Prodotto
- Autore CNR di
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi
- Editore di
- Insieme di parole chiave di