http://www.cnr.it/ontology/cnr/individuo/prodotto/ID191475
Diamond MESFET performance improvement by layout optimization (Articolo in rivista)
- Type
- Label
- Diamond MESFET performance improvement by layout optimization (Articolo in rivista) (literal)
- Anno
- 2012-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1049/el.2012.2305 (literal)
- Alternative label
P. Calvani, E. Giovine, D.M. Trucchi (2012)
Diamond MESFET performance improvement by layout optimization
in Electronics letters (Online); IEE The Institution of Electrical Engineers, London (Regno Unito)
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- P. Calvani, E. Giovine, D.M. Trucchi (literal)
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- CNR-IMIP
CNR-IFN (literal)
- Titolo
- Diamond MESFET performance improvement by layout optimization (literal)
- Abstract
- Hydrogen terminated diamond is a promising materialfor metal semi-conductor field effect transistors (MESFETs) fabrication and research
effort is focused on diamond quality improvement. We focus our
attention on device layout and structure to improveRF performances,
designed on the basis of diamond physical properties, keeping into
account characterization of previously fabricated devices. Significant
increase of current gain cut-off frequency fT, from 3.4 GHz to 6.7 GHz,
has been obtained, while maximum oscillation frequency fMAXraise from
10.4 GHz to 11.8 GHz (literal)
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