Atomic and electronic structure of ultrathin fluoride barrier layers at the oxide/Si interface (Articolo in rivista)

Type
Label
  • Atomic and electronic structure of ultrathin fluoride barrier layers at the oxide/Si interface (Articolo in rivista) (literal)
Anno
  • 2011-01-01T00:00:00+01:00 (literal)
Alternative label
  • L Pasquali, M Montecchi, S Nannarone, and F Boscherini (2011)
    Atomic and electronic structure of ultrathin fluoride barrier layers at the oxide/Si interface
    in Journal of physics. Condensed matter (Print)
    (literal)
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  • L Pasquali, M Montecchi, S Nannarone, and F Boscherini (literal)
Pagina inizio
  • 355003-1 (literal)
Pagina fine
  • 355003-11 (literal)
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  • 23 (literal)
Rivista
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  • 11 (literal)
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  • Department of Materials and Environmental Engineering, University of Modena and Reggio Emilia, Via Vignolese 905, I-41125 Modena, Italy 2 CNR-IOM, Area Science Park, s.s.14, km 163.5, 34012 Basovizza (Trieste), Italy 3 Department of Physics, University of Bologna, Viale Berti Pichat 6/2, I-40127 Bologna, Italy 4 CNR-IOM-OGG c/o ESRF GILDA CRG, BP220, F-38043 Grenoble, France (literal)
Titolo
  • Atomic and electronic structure of ultrathin fluoride barrier layers at the oxide/Si interface (literal)
Abstract
  • A SrF2 ultrathin barrier layer on Si(001) is used to form a sharp interface and block reactivity and intermixing between the semiconductor and a Yb2O3 overlayer. Yb2O3/Si(001) and Yb2O3/SrF2/Si(001) interfaces grown in ultra high vacuum by molecular beam epitaxy are studied by photoemission and x-ray absorption fine structure. Without the fluoride interlayer, Yb2O3/Si(001) presents an interface reacted region formed by SiOx and/or silicate compounds, which is about 9 °A thick and increases up to 14-15 °A after annealing at 500-700 oC. A uniform single layer of SrF2 molecules blocks intermixing and reduces the oxidized Si region to 2.4 °A after deposition and to 3.5 °A after annealing at 500 oC. In both cases we estimate a conduction band offset and a valence band offset of ~1.7 eV and 2.4 eV between the oxide and Si, respectively. X-ray absorption fine structure measurements at the Yb LIII edge suggest that the Yb oxide films exhibit a significant degree of static disorder with and without the fluoride barrier. Sr K edge measurements indicate that the ultrathin fluoride films are reacted, with the formation of bonds between Si and Sr; the Sr-Sr and Sr-F interatomic distances in the ultrathin fluoride barrier film are relaxed to the bulk value. (literal)
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