Bulk Electronic Structure of the Dilute Ferromagnetic Semiconductor Ga(1-x)Mn(x)As through Hard X-ray Angle-Resolved Photoemission (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Bulk Electronic Structure of the Dilute Ferromagnetic Semiconductor Ga(1-x)Mn(x)As through Hard X-ray Angle-Resolved Photoemission (Articolo in rivista) (literal)

Anno

• 2012-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1038/NMAT3450 (literal)

Alternative label

• A. X. Gray, J. Minar, S. Ueda, P. R. Stone, Y. Yamashita, J. Fujii, J. Braun, L. Plucinski, C. M. Schneider, G. Panaccione, H. Ebert, O. D. Dubon, K. Kobayashi, and C. S. Fadley (2012)
  Bulk Electronic Structure of the Dilute Ferromagnetic Semiconductor Ga(1-x)Mn(x)As through Hard X-ray Angle-Resolved Photoemission
  in Nature materials (Print)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• A. X. Gray, J. Minar, S. Ueda, P. R. Stone, Y. Yamashita, J. Fujii, J. Braun, L. Plucinski, C. M. Schneider, G. Panaccione, H. Ebert, O. D. Dubon, K. Kobayashi, and C. S. Fadley (literal)

Pagina inizio

• 957 (literal)

Pagina fine

• 962 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 11 (literal)

Rivista

• Nature materials (Rivista)

Note

• Scopus (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• Department of Physics, University of California Davis ; Materials Sciences Division, Lawrence Berkeley National Laboratory ; Stanford Institute for Materials and Energy Sciences, Stanford University and SLAC National Accelerator Laboratory ; Department of Chemistry, Ludwig Maximillian University ; NIMS Beamline Station at SPring-8, National Institute for Materials Science ; Department of Materials Science and Engineering, University of California Berkeley ; Istituto Officina dei Materiali IOM-CNR, Lab. TASC ; Peter Gru?nberg Institut PGI-6, Research Center Ju?lich (literal)

Titolo

• Bulk Electronic Structure of the Dilute Ferromagnetic Semiconductor Ga(1-x)Mn(x)As through Hard X-ray Angle-Resolved Photoemission (literal)

Abstract

• A detailed understanding of the origin of the magnetism in dilute magnetic semiconductors is crucial to their development for applications. Using hard X-ray angle-resolved photoemission (HARPES) at 3.2 keV, we investigate the bulk electronic structure of the prototypical dilute magnetic semiconductor Ga0:97Mn0:03As, and the reference undoped GaAs. The data are compared to theory based on the coherent potential approximation and fully relativistic one-step-model photoemission calculations including matrix-element effects. Distinct differences are found between angle-resolved, as well as angle-integrated, valence spectra of Ga0:97Mn0:03As and GaAs, and these are in good agreement with theory. Direct observation of Mn-induced states between the GaAs valence-band maximum and the Fermi level, centred about 400meV below this level, as well as changes throughout the full valence-level energy range, indicates that ferromagnetism in Ga1?xMnxAs must be considered to arise from both p-d exchange and double exchange, thus providing a more unifying picture of this controversial material. (literal)

Prodotto di

• Correlazione elettronica in interfacce magnetiche nanostrutturate e sistemi self-assembled (interfacce molecole-metallo, metallo-metallo, etc..) (MD.P04.006.002) (Modulo)

Autore CNR

• JUN FUJII (Persona)
• GIANCARLO PANACCIONE (Unità di personale interno)

Incoming links:

Autore CNR di

• GIANCARLO PANACCIONE (Unità di personale interno)
• JUN FUJII (Persona)

Prodotto

• Correlazione elettronica in interfacce magnetiche nanostrutturate e sistemi self-assembled (interfacce molecole-metallo, metallo-metallo, etc..) (MD.P04.006.002) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Nature materials (Rivista)