http://www.cnr.it/ontology/cnr/individuo/prodotto/ID191253
Laser writing of the electronic activity of N- and H-atoms in GaAs (Articolo in rivista)
- Type
- Label
- Laser writing of the electronic activity of N- and H-atoms in GaAs (Articolo in rivista) (literal)
- Anno
- 2011-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1063/1.3610464 (literal)
- Alternative label
N. Balakrishnan, A. Patane`, O. Makarovsky, A. Polimeni, M. Capizzi, F. Martelli,
and S. Rubini (2011)
Laser writing of the electronic activity of N- and H-atoms in GaAs
in Applied physics letters
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- N. Balakrishnan, A. Patane`, O. Makarovsky, A. Polimeni, M. Capizzi, F. Martelli,
and S. Rubini (literal)
- Pagina inizio
- Pagina fine
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
- Rivista
- Note
- ISI Web of Science (WOS) (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, United Kingdom
Dipartimento di Fisica, Sapienza Universita` di Roma, Piazzale A. Moro 2, 00185 Roma, Italy
TASC-INFM-CNR, Area Science Park, S.S. 14, Km. 163.5, 34012 Trieste, Italy (literal)
- Titolo
- Laser writing of the electronic activity of N- and H-atoms in GaAs (literal)
- Abstract
- We use a focussed laser beam to control the electronic activity of N- and H-atoms in a dilute
nitride Ga(AsN)/GaAs quantum well. Our approach yields submicron resolution in the spatial
manipulation of the electronic properties and can provide an alternative method to masking
techniques for H-defect engineering and in-plane patterning of the band gap energy. VC (literal)
- Prodotto di
- Autore CNR
Incoming links:
- Prodotto
- Autore CNR di
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi
