Optical study of hydrogen-irradiated GaAsN/GaAs heterostructures (Articolo in rivista)

Type
Label
  • Optical study of hydrogen-irradiated GaAsN/GaAs heterostructures (Articolo in rivista) (literal)
Anno
  • 2011-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1063/1.3597818 (literal)
Alternative label
  • M. Geddo, M. Patrini, G. Guizzetti, M. Galli, R. Trotta, A. Polimeni, M. Capizzi, F. Martelli, and S. Rubini (2011)
    Optical study of hydrogen-irradiated GaAsN/GaAs heterostructures
    in Journal of applied physics
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • M. Geddo, M. Patrini, G. Guizzetti, M. Galli, R. Trotta, A. Polimeni, M. Capizzi, F. Martelli, and S. Rubini (literal)
Pagina inizio
  • 123511-1 (literal)
Pagina fine
  • 123511-8 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 109 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Dipartimento di Fisica \"A. Volta\" and CNISM, Universita` degli Studi di Pavia, via Bassi 6, I-27100 Pavia, Italy Dipartimento di Fisica, Sapienza Universita` di Roma, P.le A. Moro 2, 00185 Roma, Italy Laboratorio Nazionale TASC-INFM-CNR, Area Science Park, S.S. 14, Km. 163.5, 34149 Trieste, Italy (literal)
Titolo
  • Optical study of hydrogen-irradiated GaAsN/GaAs heterostructures (literal)
Abstract
  • The effect of hydrogen irradiation on the optical properties of GaAs1?xNx/GaAs heterostructures was investigated using photoreflectance and reflectance techniques. Systematic measurements performed on both as-grown and hydrogenated samples for N-concentrations ranging from 0.0% to 3.5% and for H-implanted doses from 3?1018 to 6?1018 ions/cm2 have shown that (a) the H-induced widening of the energy gap is accompanied by a decrease of the refractive index of the H-treated samples with respect to the as-grown ones, resulting in an index mismatch that can be as large as 2% in the subgap spectral region; and (b) the presence of compressive strain in fully passivated GaAsN determines a decrease of the refractive index even below that of GaAs that can be eliminated via moderate thermal annealing. These findings are promising for the development of heterostructures with planar geometry, in which the simultaneous confinement of both carriers and photons, even on a nanometric scale, can be obtained in a single step process. (literal)
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