http://www.cnr.it/ontology/cnr/individuo/prodotto/ID191192
Polymorphism of Amorphous Ge(2)Sb(2)Te(5) Probed by EXAFS and Raman Spectroscopy (Articolo in rivista)
- Type
- Label
- Polymorphism of Amorphous Ge(2)Sb(2)Te(5) Probed by EXAFS and Raman Spectroscopy (Articolo in rivista) (literal)
- Anno
- 2011-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1149/2.019112esl (literal)
- Alternative label
Carria E, Mio AM, Gibilisco S, Miritello M, d'Acapito F, Grimaldi MG, Rimini E (2011)
Polymorphism of Amorphous Ge(2)Sb(2)Te(5) Probed by EXAFS and Raman Spectroscopy
in Electrochemical and solid-state letters
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- Carria E, Mio AM, Gibilisco S, Miritello M, d'Acapito F, Grimaldi MG, Rimini E (literal)
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- Note
- ISI Web of Science (WOS) (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- Dipartimento di Fisica ed Astronomia, Universit` a di Catania, I-95123 Catania, Italy
MATIS IMM-CNR, I-95123 Catania, Italy
CNR-IOM-OGG, c/o ESRF, GILDA CRG, F-38043 Grenoble, France
CNR-Istituto per la Microelettronica e Microsistemi, I-95121 Catania, Italy (literal)
- Titolo
- Polymorphism of Amorphous Ge(2)Sb(2)Te(5) Probed by EXAFS and Raman Spectroscopy (literal)
- Abstract
- The local order of amorphous Ge2Sb2Te5films (50 nm) prepared by sputtering (AD), melt quenching (MQ), or ion irradiation (II) hasbeen probed by EXAFS and Raman spectroscopy. The Ge K edge of the AD sample shows a stronger contribution from homopolarGe-Ge bonds with respect to irradiated films. Raman spectroscopy measurements indicate a greater abundance of homopolar Te-Tebonds in AD film with respect to MQ and II. Irradiation of deposited amorphous GST films results in a reduction of \"wrong\"homopolar bonds. This variation is probably the origin of the faster crystallization speed of MQ and II amorphous samples. (literal)
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