Polymorphism of Amorphous Ge(2)Sb(2)Te(5) Probed by EXAFS and Raman Spectroscopy (Articolo in rivista)

Type
Label
  • Polymorphism of Amorphous Ge(2)Sb(2)Te(5) Probed by EXAFS and Raman Spectroscopy (Articolo in rivista) (literal)
Anno
  • 2011-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1149/2.019112esl (literal)
Alternative label
  • Carria E, Mio AM, Gibilisco S, Miritello M, d'Acapito F, Grimaldi MG, Rimini E (2011)
    Polymorphism of Amorphous Ge(2)Sb(2)Te(5) Probed by EXAFS and Raman Spectroscopy
    in Electrochemical and solid-state letters
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Carria E, Mio AM, Gibilisco S, Miritello M, d'Acapito F, Grimaldi MG, Rimini E (literal)
Pagina inizio
  • H480 (literal)
Pagina fine
  • H480 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 14 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 12 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Dipartimento di Fisica ed Astronomia, Universit` a di Catania, I-95123 Catania, Italy MATIS IMM-CNR, I-95123 Catania, Italy CNR-IOM-OGG, c/o ESRF, GILDA CRG, F-38043 Grenoble, France CNR-Istituto per la Microelettronica e Microsistemi, I-95121 Catania, Italy (literal)
Titolo
  • Polymorphism of Amorphous Ge(2)Sb(2)Te(5) Probed by EXAFS and Raman Spectroscopy (literal)
Abstract
  • The local order of amorphous Ge2Sb2Te5films (50 nm) prepared by sputtering (AD), melt quenching (MQ), or ion irradiation (II) hasbeen probed by EXAFS and Raman spectroscopy. The Ge K edge of the AD sample shows a stronger contribution from homopolarGe-Ge bonds with respect to irradiated films. Raman spectroscopy measurements indicate a greater abundance of homopolar Te-Tebonds in AD film with respect to MQ and II. Irradiation of deposited amorphous GST films results in a reduction of \"wrong\"homopolar bonds. This variation is probably the origin of the faster crystallization speed of MQ and II amorphous samples. (literal)
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