http://www.cnr.it/ontology/cnr/individuo/prodotto/ID191102
InGaAs/GaAs Core-Shell Nanowires Grown by Molecular Beam Epitaxy (Articolo in rivista)
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- InGaAs/GaAs Core-Shell Nanowires Grown by Molecular Beam Epitaxy (Articolo in rivista) (literal)
- Anno
- 2011-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1109/JSTQE.2010.2068279 (literal)
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Fauzia Jabeen 1, Vincenzo Grillo 2, Faustino Martelli 3, and Silvia Rubini 4 (2011)
InGaAs/GaAs Core-Shell Nanowires Grown by Molecular Beam Epitaxy
in IEEE journal of selected topics in quantum electronics; IEEE-Institute Of Electrical And Electronics Engineers Inc., Piscataway (Stati Uniti d'America)
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- Fauzia Jabeen 1, Vincenzo Grillo 2, Faustino Martelli 3, and Silvia Rubini 4 (literal)
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- http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=5607281 (literal)
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- 1 Sincrotrone Trieste and with TASC Laboratory, INFM-CNR, Trieste 34012, Italy; Istituto di Nanoscienze-CNR, 41125 Modena and IMEM-CNR, 43010 Parma, Italy; 3 IMM-CNR, Rome 0013, Italy; 4 ASC Laboratory, IOM-CNR, Trieste 34149, Italy (literal)
- Titolo
- InGaAs/GaAs Core-Shell Nanowires Grown by Molecular Beam Epitaxy (literal)
- Abstract
- Au-catalyzed InxGa1-xAs nanowires (NWs) and InxGa1-xAs/GaAs core-shell NWs were grown by molecular beam epitaxy on (1 1 1)B GaAs. The effects of In content, growth temperature, andV/III elemental flux ratios onNWmorphology have been investigated. The structure of the NWs has been characterized by SEM and transmission electronmicroscopy and their optical properties by low-temperature photoluminescence. (literal)
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