InGaAs/GaAs Core-Shell Nanowires Grown by Molecular Beam Epitaxy (Articolo in rivista)

Type
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  • InGaAs/GaAs Core-Shell Nanowires Grown by Molecular Beam Epitaxy (Articolo in rivista) (literal)
Anno
  • 2011-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1109/JSTQE.2010.2068279 (literal)
Alternative label
  • Fauzia Jabeen 1, Vincenzo Grillo 2, Faustino Martelli 3, and Silvia Rubini 4 (2011)
    InGaAs/GaAs Core-Shell Nanowires Grown by Molecular Beam Epitaxy
    in IEEE journal of selected topics in quantum electronics; IEEE-Institute Of Electrical And Electronics Engineers Inc., Piscataway (Stati Uniti d'America)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Fauzia Jabeen 1, Vincenzo Grillo 2, Faustino Martelli 3, and Silvia Rubini 4 (literal)
Pagina inizio
  • 794 (literal)
Pagina fine
  • 800 (literal)
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  • http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=5607281 (literal)
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  • 17 (literal)
Rivista
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  • 7 (literal)
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  • 4 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • 1 Sincrotrone Trieste and with TASC Laboratory, INFM-CNR, Trieste 34012, Italy; Istituto di Nanoscienze-CNR, 41125 Modena and IMEM-CNR, 43010 Parma, Italy; 3 IMM-CNR, Rome 0013, Italy; 4 ASC Laboratory, IOM-CNR, Trieste 34149, Italy (literal)
Titolo
  • InGaAs/GaAs Core-Shell Nanowires Grown by Molecular Beam Epitaxy (literal)
Abstract
  • Au-catalyzed InxGa1-xAs nanowires (NWs) and InxGa1-xAs/GaAs core-shell NWs were grown by molecular beam epitaxy on (1 1 1)B GaAs. The effects of In content, growth temperature, andV/III elemental flux ratios onNWmorphology have been investigated. The structure of the NWs has been characterized by SEM and transmission electronmicroscopy and their optical properties by low-temperature photoluminescence. (literal)
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