Self-catalyzed GaAs nanowire growth on Si-treated GaAs(100) substrates (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Self-catalyzed GaAs nanowire growth on Si-treated GaAs(100) substrates (Articolo in rivista) (literal)

Anno

• 2011-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1063/1.3579449 (literal)

Alternative label

• S. Ambrosini, M. Fanetti, V. Grillo, A. Franciosi, and S. Rubini (2011)
  Self-catalyzed GaAs nanowire growth on Si-treated GaAs(100) substrates
  in Journal of applied physics
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• S. Ambrosini, M. Fanetti, V. Grillo, A. Franciosi, and S. Rubini (literal)

Pagina inizio

• 094306-1 (literal)

Pagina fine

• 094306-7 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 109 (literal)

Rivista

• Journal of applied physics (Rivista)

Note

• ISI Web of Science (WOS) (literal)
• Scopus (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• Istituto Officina dei Materiali CNR, Laboratorio TASC, S.S. 14, Km. 163.5, I-34149 Trieste, Italy Sincrotrone Trieste S.C.p.A., Elettra Laboratory, S.S. 14, Km. 163.5 I-34149 Trieste, Italy Dipartimento di Fisica and CENMAT, Universita` di Trieste, 34127 Trieste, Italy Centro S3, CNR-Istituto Nanoscienze, Via Campi 213A, 41125 Modena, Italy IMEM-CNR, Parco Area delle Scienze 37/A, 43010 Parma, Italy (literal)

Titolo

• Self-catalyzed GaAs nanowire growth on Si-treated GaAs(100) substrates (literal)

Abstract

• Self-catalyzed GaAs nanowire growth was obtained by molecular beam epitaxy on GaAs(001) substrates after predeposition of subnanometer-thick Si layers. Two substrate preparation methods are presented, the first based on the epitaxial growth of Si on GaAs and subsequent exposure to atmosphere, and the second on the direct deposition of Si on epiready GaAs substrates. X-ray photoemission spectroscopy shows that both methods result in a thin Si oxide layer that promotes the growth of GaAs nanowires aligned along the h111i direction. High densities of nanowires were obtained at substrate temperatures between 620 and 680 ?C. Systematic electron microscopy studies indicate that nanowire growth is associated with the formation of Ga nanoparticles on the substrate surface, which act as a catalyst in the vapor-liquid-solid growth mechanism frame. The majority of the nanowires have a pure zinc-blende structure, and their photoluminescence is dominated by a photoluminescence peak 3 to 5 meV in width and centered at 1.516 to 1517 eV. (literal)

Prodotto di

• Istituto dei materiali per l'elettronica ed il magnetismo (IMEM) (Istituto)

Autore CNR

• VINCENZO GRILLO (Persona)
• SILVIA RUBINI (Unità di personale interno)
• ALFONSO FRANCIOSI (Unità di personale esterno)

Incoming links:

Autore CNR di

• VINCENZO GRILLO (Persona)
• SILVIA RUBINI (Unità di personale interno)
• ALFONSO FRANCIOSI (Unità di personale esterno)

Prodotto

• Istituto dei materiali per l'elettronica ed il magnetismo (IMEM) (Istituto)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Journal of applied physics (Rivista)