Giant and reversible enhancement of the electrical resistance of GaAs1-xNx by hydrogen irradiation (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Giant and reversible enhancement of the electrical resistance of GaAs1-xNx by hydrogen irradiation (Articolo in rivista) (literal)

Anno

• 2011-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1103/PhysRevB.84.085331 (literal)

Alternative label

• J. Alvarez, J.-P. Kleider, R. Trotta, A. Polimeni, M. Capizzi, F. Martelli , L. Mariucci, S. Rubini (2011)
  Giant and reversible enhancement of the electrical resistance of GaAs1-xNx by hydrogen irradiation
  in Physical review. B, Condensed matter and materials physics (CD-ROM)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• J. Alvarez, J.-P. Kleider, R. Trotta, A. Polimeni, M. Capizzi, F. Martelli , L. Mariucci, S. Rubini (literal)

Pagina inizio

• 085331-1 (literal)

Pagina fine

• 085331-5 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 84 (literal)

Rivista

• Physical review. B, Condensed matter and materials physics (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 5 (literal)

Note

• Scopus (literal)
• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• Laboratoire de Ge´nie E´lectrique de Paris, CNRS UMR8507, SUPELEC Dipartimento di Fisica, Sapienza Universit`a di Roma IMM-CNR IOM-CNR (literal)

Titolo

• Giant and reversible enhancement of the electrical resistance of GaAs1-xNx by hydrogen irradiation (literal)

Abstract

• The electrical properties of untreated and hydrogen-irradiated GaAs1-xNx are investigated by conductive-probe atomic force microscopy (CP-AFM). After hydrogen irradiation, the resistance R of GaAs1-xNx increases by more than three orders of magnitude while that of a N-free GaAs reference slightly decreases. Thermal annealing at 550 oC of H-irradiated GaAs1-xNx restores the pristine electrical properties of the as-grown sample thus demonstrating that this phenomenon is fully reversible. These effects are attributed to the nitrogen-hydrogen complexes that passivate N in GaAs1-xNx (thus restoring the energy gap of N-free GaAs) and, moreover, reduce the carrier scattering time by more than one order of magnitude. This opens up a route to the fabrication of planar conductive/resistive/conductive heterostructures with submicrometer spatial resolution, which is also reported here. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• SILVIA RUBINI (Unità di personale interno)
• FAUSTINO MARTELLI (Unità di personale interno)
• LUIGI MARIUCCI (Unità di personale interno)

Incoming links:

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR di

• FAUSTINO MARTELLI (Unità di personale interno)
• SILVIA RUBINI (Unità di personale interno)
• LUIGI MARIUCCI (Unità di personale interno)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Physical review. B, Condensed matter and materials physics (Rivista)